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11 条记录 (耗时 0.02 秒)

    Semiconductor optical modulation element
    2.
    发明授权
    Semiconductor optical modulation element 有权

    公开(公告)号：US11126058B1

    公开(公告)日：2021-09-21

    申请号：US16332740

    申请日：2017-09-13

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Yoshihiro Ogiso ,  Hiroyasu Mawatari ,  Nobuhiro Kikuchi

    IPC分类号： G02F1/21 ,  G02F1/017

    摘要： The present invention provides a highly reliable, high-speed, and low-loss semiconductor optical modulation element that protects a pin junction structure in a modulation region against reverse voltage ESD by configuring an additional capacity having a thyristor structure between a plurality of feeding pad electrodes. An n-type contact layer, an n-type cladding layer, a non-doped core/cladding layer, a p-type cladding layer, and a p-type contact layer are sequentially laminated on the substrate surface. A Mach-Zehnder interferometric waveguide and a plurality of feeding pad installation sections are formed by dry etching. The n-type contact layer and the n-type cladding layer are removed except for a modulation region of the Mach-Zehnder interferometric waveguide and a feeding region in which the feeding pad installation sections are formed so that the modulation region and the semiconductor of the lower part of the feeding region are electrically isolated from each other. The feeding pads are formed on the common n-type contact layer and n-type cladding layer. A thyristor structure of a pinip junction is formed between the feeding pads.

    High-frequency line
    3.
    发明授权
    High-frequency line 有权

    公开(公告)号：US10522892B2

    公开(公告)日：2019-12-31

    申请号：US15737214

    申请日：2016-06-24

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Nobuhiro Kikuchi ,  Eiichi Yamada ,  Yoshihiro Ogiso ,  Josuke Ozaki

    IPC分类号： H01P5/02 ,  G02F1/025 ,  H01P5/08 ,  H01P3/00 ,  H01P3/08

    摘要： This invention provides a high-frequency line adopting a structure to suppress an impedance variation and occurrence of an excessive power loss in high-frequency wiring having intersection with an optical waveguide. A high-frequency line is a microstrip line which has a basic configuration of stacking a ground electrode, a dielectric layer, and a signal electrode in this order on a SI-InP substrate. In addition, as shown in a transverse sectional view, an optical waveguide core made of InP-based semiconductor intersects with the high-frequency line in a crossing manner. A width of the signal electrode is partially increased in a certain region covering the intersection with the optical waveguide along a propagating direction of the high-frequency line. In the microstrip line, the width of the signal electrode is partially increased from w1 to w2, and characteristic impedance is thus reduced as compared to one with the uniform width w1.

    Optical Modulator Module
    4.
    发明申请
    Optical Modulator Module 有权

    公开(公告)号：US20210341812A1

    公开(公告)日：2021-11-04

    申请号：US17276656

    申请日：2019-09-11

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Shigeru Kanazawa ,  Hiromasa Tanobe ,  Josuke Ozaki ,  Shinsuke Nakano ,  Nobuhiro Kikuchi

    IPC分类号： G02F1/21 ,  G02F1/225 ,  G02F1/01

    摘要： In a terminator, a midpoint electrode is provided between a first signal electrode and a second signal electrode, a first resistor is connected between the first signal electrode and the midpoint electrode, a second resistor is connected between the second signal electrode and the midpoint electrode, a first GND electrode is provided on a side opposite to the side where the first resistor is provided with the first signal electrode interposed therebetween, a second GND electrode is provided on the side opposite to the side where the second resistor is provided with the second signal electrode interposed therebetween, and capacitances in the terminator are formed between the first signal electrode and the midpoint electrode, between the second signal electrode and the midpoint electrode, between the first signal electrode and the first GND electrode, and between the second signal electrode and the second GND electrode.

    Semiconductor optical modulation element
    5.
    发明授权
    Semiconductor optical modulation element 有权

    公开(公告)号：US10254624B2

    公开(公告)日：2019-04-09

    申请号：US15577918

    申请日：2016-06-01

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Yoshihiro Ogiso ,  Josuke Ozaki ,  Norihide Kashio ,  Nobuhiro Kikuchi ,  Masaki Kohtoku

    IPC分类号： G02F1/035 ,  G02F1/225 ,  G02F1/025 ,  G02F1/21

    摘要： To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type seminsulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitancl-oaded electrode is provided on the n-type clad layer.

    HIGH-FREQUENCY LINE
    6.
    发明申请
    HIGH-FREQUENCY LINE 审中-公开

    公开(公告)号：US20180175474A1

    公开(公告)日：2018-06-21

    申请号：US15737214

    申请日：2016-06-24

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Nobuhiro Kikuchi ,  Eiichi Yamada ,  Yoshihiro Ogiso ,  Josuke Ozaki

    IPC分类号： H01P3/08 ,  G02F1/025 ,  H01P3/00

    摘要： This invention provides a high-frequency line adopting a structure to suppress an impedance variation and occurrence of an excessive power loss in high-frequency wiring having intersection with an optical waveguide. A high-frequency line is a microstrip line which has a basic configuration of stacking a ground electrode, a dielectric layer, and a signal electrode in this order on a SI-InP substrate. In addition, as shown in a transverse sectional view, an optical waveguide core made of InP-based semiconductor intersects with the high-frequency line in a crossing manner. A width of the signal electrode is partially increased in a certain region covering the intersection with the optical waveguide along a propagating direction of the high-frequency line. In the microstrip line, the width of the signal electrode is partially increased from w1 to w2, and characteristic impedance is thus reduced as compared to one with the uniform width w1.

    Optical Modulator
    8.
    发明申请
    Optical Modulator 有权

    公开(公告)号：US20210080795A1

    公开(公告)日：2021-03-18

    申请号：US16970283

    申请日：2019-03-06

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Nobuhiro Kikuchi ,  Eiichi Yamada ,  Josuke Ozaki ,  Yoshihiro Ogiso ,  Yuta Ueda ,  Shinsuke Nakano

    IPC分类号： G02F1/225 ,  G02F1/01 ,  G02F1/035

    摘要： Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments. The characteristic impedances and the propagation constants may be changed by changing a dielectric constant of the dielectric instead of changing the width or the thickness of the signal electrode.

    SEMICONDUCTOR OPTICAL MODULATION ELEMENT
    9.
    发明申请
    SEMICONDUCTOR OPTICAL MODULATION ELEMENT 审中-公开

    公开(公告)号：US20180164654A1

    公开(公告)日：2018-06-14

    申请号：US15577918

    申请日：2016-06-01

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Yoshihiro Ogiso ,  Josuke Ozaki ,  Norihide Kashio ,  Nobuhiro Kikuchi ,  Masaki Kohtoku

    IPC分类号： G02F1/225

    CPC分类号： G02F1/2257 ,  G02F1/025 ,  G02F1/225 ,  G02F2001/212 ,  G02F2202/102 ,  G02F2202/107

    摘要： To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type semi-insulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitance-loaded electrode is provided on the n-type clad layer.

    Optical modulator module
    10.
    发明授权
    Optical modulator module 有权

    公开(公告)号：US12066735B2

    公开(公告)日：2024-08-20

    申请号：US17276656

    申请日：2019-09-11

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Shigeru Kanazawa ,  Hiromasa Tanobe ,  Josuke Ozaki ,  Shinsuke Nakano ,  Nobuhiro Kikuchi

    IPC分类号： G02F1/21 ,  G02F1/01 ,  G02F1/225

    CPC分类号： G02F1/212 ,  G02F1/0121 ,  G02F1/2257

    摘要： In a terminator, a midpoint electrode is provided between a first signal electrode and a second signal electrode, a first resistor is connected between the first signal electrode and the midpoint electrode, a second resistor is connected between the second signal electrode and the midpoint electrode, a first GND electrode is provided on a side opposite to the side where the first resistor is provided with the first signal electrode interposed therebetween, a second GND electrode is provided on the side opposite to the side where the second resistor is provided with the second signal electrode interposed therebetween, and capacitances in the terminator are formed between the first signal electrode and the midpoint electrode, between the second signal electrode and the midpoint electrode, between the first signal electrode and the first GND electrode, and between the second signal electrode and the second GND electrode.