公开(公告)号：US20200373736A1

公开(公告)日：2020-11-26

申请号：US16993193

申请日：2020-08-13

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Zhigang CHEN ,  Nicolas BIEKERT

IPC: H01S5/065 ,  H01S5/20 ,  H01S5/22

Abstract: A laser diode, comprising a transverse waveguide that is orthogonal to the lateral waveguide comprising an active layer between an n-type waveguide layer and a p-type waveguide layer, wherein the transverse waveguide is bounded by an n-type cladding layer on an n-side and p-type cladding layer on a p-side and a lateral waveguide bounded in a longitudinal direction at a first end by a high reflector (HR) coated facet and at a second end by a partial reflector (PR) coated facet, the lateral waveguide further comprising a buried higher order mode suppression layer (HOMSL) disposed beneath the p-cladding within the lateral waveguide or on one or both sides of the lateral waveguide or a combination thereof, wherein the HOMSL extends in a longitudinal direction from the HR facet a length less than the distance between the HR facet and the PR facet.