公开(公告)号：US20200373736A1

公开(公告)日：2020-11-26

申请号：US16993193

申请日：2020-08-13

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Zhigang CHEN ,  Nicolas BIEKERT

IPC: H01S5/065 ,  H01S5/20 ,  H01S5/22

Abstract: A laser diode, comprising a transverse waveguide that is orthogonal to the lateral waveguide comprising an active layer between an n-type waveguide layer and a p-type waveguide layer, wherein the transverse waveguide is bounded by an n-type cladding layer on an n-side and p-type cladding layer on a p-side and a lateral waveguide bounded in a longitudinal direction at a first end by a high reflector (HR) coated facet and at a second end by a partial reflector (PR) coated facet, the lateral waveguide further comprising a buried higher order mode suppression layer (HOMSL) disposed beneath the p-cladding within the lateral waveguide or on one or both sides of the lateral waveguide or a combination thereof, wherein the HOMSL extends in a longitudinal direction from the HR facet a length less than the distance between the HR facet and the PR facet.

公开(公告)号：US20190052050A1

公开(公告)日：2019-02-14

申请号：US16154510

申请日：2018-10-08

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Johannes BOELEN

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/022 ,  H01S3/0941 ,  H01S3/094

Abstract: A device for cooling a laser diode pump comprising a Low Size Weight Power Efficient (SWAP) Laser Diode (LSLD) assembly, including a laser diode coupled to a submount on a first surface, the submount comprising a first thermally conductive material and a heatsink coupled to a second surface of the submount, wherein the heatsink comprises a second thermally conductive material, the heatsink comprising one or more members formed on a side opposite the coupled submount. The device further comprising a housing coupled to the LSLD assembly, the housing comprising a carrier structure having an aperture configured to support the LSLD assembly on a first side and having a plurality of channels on a second side, a bottom segment configured to couple to the carrier segment to create an enclosure around the channels between a top side of the bottom segment and the second side of the carrier structure, an inlet and outlet formed in the housing for transporting a coolant into and out of the channels in the enclosure, wherein the members are disposed within the enclosure so as to expose the members to the coolant.

公开(公告)号：US20230344197A1

公开(公告)日：2023-10-26

申请号：US17640646

申请日：2021-11-11

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR

IPC: H01S5/12 ,  H01S5/028 ,  H01S5/32

CPC classification number: H01S5/1203 ,  H01S5/0287 ,  H01S5/3211

Abstract: Some embodiments may include a semiconductor laser device comprising: an active layer to generate light; a front facet positioned at a first end of said active layer, with an AR coating or PR coating; a rear facet positioned on a second opposite end of said active layer thereby forming a resonator between said front facet and said rear facet; and a first order diffraction grating positioned within said resonator along only a portion of the length of said active layer, wherein the semiconductor laser device is arranged to emit light from both ends, and the diffraction grating has two non-contiguous segments each extending to one of the facets; or a single end, wherein the rear facet is a rear light reflecting facet with an HR-coating. Other embodiments may be disclosed and/or claimed.

公开(公告)号：US20170358900A1

公开(公告)日：2017-12-14

申请号：US15498422

申请日：2017-04-26

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Johannes BOELEN

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/022

CPC classification number: H01S5/02423 ,  H01S3/094003 ,  H01S3/09415 ,  H01S5/02208 ,  H01S5/02236 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02438 ,  H01S5/02469 ,  H01S5/4012 ,  H01S5/4025

Abstract: A device for cooling a laser diode pump comprising a Low Size Weight Power Efficient (SWAP) Laser Diode (LSLD) assembly, including a laser diode coupled to a submount on a first surface, the submount comprising a first thermally conductive material and a heatsink coupled to a second surface of the submount, wherein the heatsink comprises a second thermally conductive material, the heatsink comprising one or more members formed on a side opposite the coupled submount. The device further comprising a housing coupled to the LSLD assembly, the housing comprising a carrier structure having an aperture configured to support the LSLD assembly on a first side and having a plurality of channels on a second side, a bottom segment configured to couple to the carrier segment to create an enclosure around the channels between a top side of the bottom segment and the second side of the carrier structure, an inlet and outlet formed in the housing for transporting a coolant into and out of the channels in the enclosure, wherein the members are disposed within the enclosure so as to expose the members to the coolant.

公开(公告)号：US20250149843A1

公开(公告)日：2025-05-08

申请号：US18933935

申请日：2024-10-31

Applicant: nLIGHT, Inc.

Inventor： Manoj KANSKAR

IPC: H01S3/067 ,  H01S3/16

Abstract: An optical fiber includes a doped core doped with thulium and a doped cladding surrounding the doped core. The doped cladding is doped with a second dopant. The doped cladding has a thickness between about 45 μm-650 μm. The doped core and the doped cladding establish a numerical aperture within a range of about 0.04-0.20.

公开(公告)号：US20220123519A1

公开(公告)日：2022-04-21

申请号：US17419000

申请日：2019-12-20

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR

IPC: H01S5/02251 ,  H01S5/024 ,  H01S5/40

Abstract: A laser diode package, comprising a housing having a metal base portion, an integrated heat spreader formed within the base, the integrated heat spreader comprising a first phase-change material (PCM) and configured to dissipate heat via phase-change cooling. A heat source may be disposed on a top surface of the base, the heat source may be thermally coupled to the integrated heat spreader so as to dissipate heat away from the heat source via phase-change cooling.

公开(公告)号：US20220077657A1

公开(公告)日：2022-03-10

申请号：US17419055

申请日：2019-12-20

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Zhigang CHEN

IPC: H01S5/20 ,  H01S5/042 ,  H01S5/34

Abstract: A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet.

公开(公告)号：US20200371285A1

公开(公告)日：2020-11-26

申请号：US16881560

申请日：2020-05-22

Applicant: NLIGHT, INC.

Inventor： Manoj KANSKAR ,  Shuang LI ,  Eric MARTIN ,  Jay SMALL ,  Jiamin ZHANG

IPC: G02B6/02 ,  C03B37/012

Abstract: An apparatus for scattering light may include: an optical fiber having a first length; and a sleeve, having a second length shorter than the first length, around the optical fiber. The optical fiber may include: a core; and cladding around the core. The sleeve may include fiber-optic material. The fiber-optic material may be substantially polymer-free. An outer surface of the sleeve may be roughened to scatter the light out of the sleeve through the roughened surface. A method of forming an apparatus for scattering light may include: providing a sleeve having a first length, the sleeve having inner and outer surfaces; providing an optical fiber having a second length longer than the first length; passing the sleeve around the optical fiber or threading the optical fiber through the sleeve; and roughening at least a portion of the outer surface of the sleeve.

公开(公告)号：US20180123317A1

公开(公告)日：2018-05-03

申请号：US15796355

申请日：2017-10-27

Applicant: nLIGHT, Inc.

Inventor： Manoj KANSKAR ,  Zhigang Chen

IPC: H01S5/065 ,  H01S5/026 ,  H01S5/028 ,  H01S5/20 ,  H01S5/12 ,  H01S5/22

Abstract: A laser diode vertical epitaxial structure, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide, a lateral waveguide that is orthogonal to the transverse waveguide, wherein the lateral waveguide is bounded in a longitudinal direction at a first end by a facet coated with a high reflector (HR) coating and at a second end by a facet coated with a partial reflector (PR) coating and a higher order mode suppression layer (HOMSL) disposed adjacent to at least one lateral side of the lateral waveguide and that extends in a longitudinal direction.