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公开(公告)号：US20200373736A1
公开(公告)日：2020-11-26
申请号：US16993193
申请日：2020-08-13
Applicant: NLIGHT, INC.
Inventor： Manoj KANSKAR , Zhigang CHEN , Nicolas BIEKERT
Abstract: A laser diode, comprising a transverse waveguide that is orthogonal to the lateral waveguide comprising an active layer between an n-type waveguide layer and a p-type waveguide layer, wherein the transverse waveguide is bounded by an n-type cladding layer on an n-side and p-type cladding layer on a p-side and a lateral waveguide bounded in a longitudinal direction at a first end by a high reflector (HR) coated facet and at a second end by a partial reflector (PR) coated facet, the lateral waveguide further comprising a buried higher order mode suppression layer (HOMSL) disposed beneath the p-cladding within the lateral waveguide or on one or both sides of the lateral waveguide or a combination thereof, wherein the HOMSL extends in a longitudinal direction from the HR facet a length less than the distance between the HR facet and the PR facet.
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公开(公告)号：US20220077657A1
公开(公告)日：2022-03-10
申请号：US17419055
申请日：2019-12-20
Applicant: NLIGHT, INC.
Inventor： Manoj KANSKAR , Zhigang CHEN
Abstract: A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet.
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