公开(公告)号：US3919768A

公开(公告)日：1975-11-18

申请号：US32006673

申请日：1973-01-02

Applicant: NORTHROP CORP

Inventor： PITTMAN RICHARD D ,  GROSSMAN NORMAN J ,  JOHNSON RONALD E

IPC: G11C11/38 ,  H01F3/00

CPC classification number: G11C11/38 ,  Y10T29/49069 ,  Y10T156/1036

Abstract: A tunnel containing structure which is capable of functioning as a magnetic memory device, a circuit device, such as a fluid circuit device, or the like and which is primarily constructed from photo-resist materials using photographic techniques. The tunnel containing structure is made by depositing a photo-resist coating on a substrate surface, partially exposing the resist coating to radiation having a proper spectral distribution and thereafter immediately depositing an additional coating on the first named coating so that the two become firmly bonded together. By exposing the second coating through a mask having selected spaced apart transparent areas and developing the latter coating in response to the exposure it is possible to produce channels in the second coating. A cover member is then bonded to the upper surface of the second coating through an additional layer of photo-resist material to form the tunnels. The structure can be used in the fabrication of magnetic storage devices, for example, by inserting driving wires in the tunnels and including conductive lines such as word straps on the substrate and the cover member.

Abstract translation: 能够用作磁存储器件的隧道容纳结构，诸如流体回路装置等的电路装置，并且其主要由使用照相技术的光致抗蚀剂材料构成。 隧道容纳结构是通过在基底表面上沉积光致抗蚀剂涂层而形成的，其部分地将抗蚀剂涂层暴露于具有适当光谱分布的辐射，然后立即在第一指定涂层上沉积另外的涂层，使得两者牢固地结合在一起 。 通过将具有选择的间隔开的透明区域的掩模暴露于第二涂层，并且响应于曝光显影后者涂层，可以在第二涂层中产生通道。 然后通过附加的光致抗蚀剂材料层将覆盖构件结合到第二涂层的上表面以形成隧道。 该结构可以用于制造磁存储装置，例如通过在隧道中插入驱动线并且包括导电线，例如基板上的字带和盖构件。