公开(公告)号：US20240085805A1

公开(公告)日：2024-03-14

申请号：US18263305

申请日：2022-01-28

申请人： NOVA LTD.

发明人： Gilad BARAK ,  Amir Sagiv ,  Yishai Schreiber ,  Jacob Ofek ,  Zvi Gorohovsky ,  Daphna Peimer

IPC分类号： G03F7/00 ,  G01N21/956

CPC分类号： G03F7/7065 ,  G01N21/95607 ,  G03F7/70625 ,  G03F7/706831 ,  G03F7/706833 ,  G03F7/706841 ,  H01L22/12

摘要： A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.