公开(公告)号：US10216098B2

公开(公告)日：2019-02-26

申请号：US15534187

申请日：2015-12-10

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Oded Cohen ,  Gilad Barak ,  Igor Turovets

IPC: G03F7/20 ,  H01L21/66

Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region.

公开(公告)号：US11093840B2

公开(公告)日：2021-08-17

申请号：US16973092

申请日：2019-06-14

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Eitan Rothstein ,  Ilya Rubinovich ,  Noam Tal ,  Barak Bringoltz ,  Yongha Kim ,  Ariel Broitman ,  Oded Cohen ,  Eylon Rabinovich ,  Tal Zaharoni ,  Shay Yogev ,  Daniel Kandel

IPC: G06N5/04 ,  H01L21/66 ,  G01B11/06 ,  G06N20/00 ,  G03F7/20 ,  H01L21/68

Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.

公开(公告)号：US10359369B2

公开(公告)日：2019-07-23

申请号：US15502329

申请日：2015-08-06

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Gilad Barak ,  Oded Cohen

IPC: G01N21/956 ,  G01B11/14 ,  G01R31/309 ,  H01L23/544 ,  H01L21/66

Abstract: A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.