公开(公告)号：US10177243B1

公开(公告)日：2019-01-08

申请号：US15626278

申请日：2017-06-19

Applicant: NXP B.V.

Inventor： Dimitar Milkov Dochev ,  Arnold Benedictus Van Der Wal ,  Maarten Jacobus Swanenberg

IPC: H03K17/687 ,  H01L29/66 ,  H01L29/78

Abstract: Described herein is an N type extended drain transistor formed from a semiconductor on insulator (SOI) wafer. The transistor has a buried P type region formed by the selective implantation of P type dopants in a semiconductor layer of the wafer at a location directly below a drift region of the transistor. The transistor also includes a source located in a P well region and a drain. The buried P type region is in electrical contact with the P well region. The N type drift region, the source, and the drain are also located in a portion of the semiconductor layer surrounded by dielectric isolation. A buried dielectric layer located below the portion of the semiconductor layer electrically isolates the portion of the semiconductor layer from a semiconductor substrate located below the buried dielectric layer.