公开(公告)号：US20190080963A1

公开(公告)日：2019-03-14

申请号：US15701849

申请日：2017-09-12

Applicant: NXP B.V.

Inventor： Martin LAPKE ,  Hartmut Buenning ,  Sascha MOELLER ,  Guido ALBERMANN ,  Michael ZERNACK ,  Leo M. HIGGINS, III

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/683 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/00 ,  H01L21/268 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Embodiments are provided herein for separating integrated circuit (IC) device die of a wafer, the wafer having a front side with an active device region and a back side, the active device region having a plurality of active devices arranged in rows and columns and separated by cutting lanes, the method including: attaching the front side of the wafer onto a first dicing tape; forming a modification zone within each cutting lane through the back side of the wafer, wherein each modification zone has a first thickness near a corner of each active device and a second thickness near a center point of each active device, wherein the second thickness is less than the first thickness; and propagating cracks through each cutting lane to separate the plurality of active devices.