公开(公告)号：US20150357407A1

公开(公告)日：2015-12-10

申请号：US14714124

申请日：2015-05-15

Applicant: NXP B.V.

Inventor： Peter STEENEKEN ,  Anco HERINGA ,  Radu SURDEANU ,  Luc VAN DIJK ,  Hendrik Johannes BERGVELD

IPC: H01L29/06 ,  H03K17/687 ,  H02M5/00 ,  H02M3/00 ,  H01L29/417 ,  H02M7/537

CPC classification number: H01L29/0634 ,  H01L29/0649 ,  H01L29/41758 ,  H01L29/42356 ,  H01L29/4238 ,  H02M3/00 ,  H02M5/00 ,  H02M7/537 ,  H03K17/687

Abstract: Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.

Abstract translation: 本公开的方面涉及包括第一半导体材料的至少两个区域和交替地插入的第二半导体材料的至少两个区域的装置，方法和系统。 另外，装置，方法和系统包括可以同时作为源极和漏极操作的第一电极和第二电极。 装置，方法和系统还包括在第一半导体材料上具有多个部分的第一栅极电极和在第二半导体材料上具有双向控制第一电极和第二电极之间的电流的第二栅电极。