公开(公告)号：US20230170871A1

公开(公告)日：2023-06-01

申请号：US18051596

申请日：2022-11-01

Applicant: NXP B.V.

Inventor： Xin Yang ,  Dominicus MARTINUS WILHELMUS Leenaerts ,  Rana Azhar Shaheen

IPC: H03H7/25 ,  H03F3/19

CPC classification number: H03H7/255 ,  H03F3/19 ,  H03F2200/451

Abstract: An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.