公开(公告)号：US20220344296A1

公开(公告)日：2022-10-27

申请号：US17239888

申请日：2021-04-26

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/498

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.