公开(公告)号：US20240105658A1

公开(公告)日：2024-03-28

申请号：US17935613

申请日：2022-09-27

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00

CPC classification number: H01L24/19 ,  H01L24/20 ,  H01L24/73 ,  H01L24/13 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/24991 ,  H01L2224/73101 ,  H01L2924/35121

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die, a portion of the RDL contacting a die pad of the semiconductor die. A non-conductive layer is formed over the RDL. An opening in the non-conductive layer is formed exposing a portion of the RDL. A plurality of plateau regions is formed in the non-conductive layer. A cavity region in the non-conductive layer separates each plateau region of the plurality of plateau regions. A metal layer is deposited over the non-conductive layer and exposed portion of the RDL and etched to expose the plurality of plateau regions through the metal layer. The cavity region remains substantially filled by a portion of the metal layer.

公开(公告)号：US20220344296A1

公开(公告)日：2022-10-27

申请号：US17239888

申请日：2021-04-26

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/498

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

公开(公告)号：US20230307402A1

公开(公告)日：2023-09-28

申请号：US18327178

申请日：2023-06-01

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Lin Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532

CPC classification number: H01L24/16 ,  H01L23/49811 ,  H01L23/53228 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/081 ,  H01L2924/01029

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

公开(公告)号：US11728308B2

公开(公告)日：2023-08-15

申请号：US17239888

申请日：2021-04-26

Applicant: NXP B.V.

Inventor： Tsung Nan Lo ,  Sharon Huey Lin Tay ,  Antonio Aguinaldo Marquez Macatangay

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532

CPC classification number: H01L24/16 ,  H01L23/49811 ,  H01L23/53228 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/081 ,  H01L2924/01029

Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.