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    SOLDERLESS INTER-COMPONENT JOINTS
    1.
    发明申请
    SOLDERLESS INTER-COMPONENT JOINTS 审中-公开

    公开(公告)号：US20190239361A1

    公开(公告)日：2019-08-01

    申请号：US15886820

    申请日：2018-02-01

    Applicant: NXP B.V.

    Inventor： Tsung Nan Lo ,  Chung Hsiung Ho

    IPC: H05K3/34 ,  H05K1/11 ,  H01L23/00 ,  H01L23/498

    CPC classification number: H05K3/3421 ,  B23K20/02 ,  B23K2101/36 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H05K1/111 ,  H05K2201/10636 ,  H05K2201/10689

    Abstract: In a die-substrate assembly, a copper inter-component joint is formed by bonding corresponding copper interconnect structures together directly, without using solder. The copper interconnect structures have distal layers of (111) crystalline copper that enable them to bond together at a relatively low temperature (e.g., below 300° C.) compared to the relatively high melting point (about 1085° C.) for the bulk copper of the rest of the interconnect structures. By avoiding the use of solder, the resulting inter-component joint will not suffer from the adverse IMC/EM effects of conventional, solder-based joints. The distal surfaces of the interconnect structures may be curved (e.g., one concave and the other convex) to facilitate mating the two structures and improve the reliability of the physical contact between the two interconnect structures. The bonding may be achieved using directed microwave radiation and microwave-sensitive flux, instead of uniform heating.

    REDISTRIBUTION LAYER HAVING A SIDEVIEW ZIG-ZAG PROFILE
    2.
    发明公开
    REDISTRIBUTION LAYER HAVING A SIDEVIEW ZIG-ZAG PROFILE 审中-公开

    公开(公告)号：US20230378107A1

    公开(公告)日：2023-11-23

    申请号：US17664117

    申请日：2022-05-19

    Applicant: NXP B.V.

    Inventor： Kuan-Hsiang Mao ,  Yufu Liu ,  Tsung Nan Lo ,  Wen Hung Huang

    IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

    CPC classification number: H01L24/05 ,  H01L23/3171 ,  H01L21/56 ,  H01L24/03 ,  H01L2224/0233 ,  H01L2224/0401 ,  H01L2224/02311

    Abstract: A semiconductor device package includes a semiconductor device and an electrically conductive pad disposed in contact with a surface of the semiconductor device. The semiconductor device package further includes a redistribution layer (RDL) formed over the electrically conductive pad and the surface of the semiconductor device, and an electrical connector disposed over and electrically coupled to the RDL. The RDL includes a first passivation layer disposed over a surface of the semiconductor device and the electrically conductive pad, and further includes an RDL trace. The RDL trace includes a first portion in contact with the electrically conductive pad, a second portion in contact with one of the electrical connector or an underlying metallization layer in contact with the electrical connector, and a third portion having a non-planar and undulating configuration relative to the surface of the semiconductor device.

    SEMICONDUCTOR DEVICE UNDER BUMP STRUCTURE AND METHOD THEREFOR
    3.
    发明申请
    SEMICONDUCTOR DEVICE UNDER BUMP STRUCTURE AND METHOD THEREFOR 有权

    公开(公告)号：US20220344296A1

    公开(公告)日：2022-10-27

    申请号：US17239888

    申请日：2021-04-26

    Applicant: NXP B.V.

    Inventor： Tsung Nan Lo ,  Sharon Huey Tay ,  Antonio Aguinaldo Marquez Macatangay

    IPC: H01L23/00 ,  H01L23/532 ,  H01L23/498

    Abstract: A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

    Solderless inter-component joints
    10.
    发明授权
    Solderless inter-component joints 有权

    公开(公告)号：US10390440B1

    公开(公告)日：2019-08-20

    申请号：US15886820

    申请日：2018-02-01

    Applicant: NXP B.V.

    Inventor： Tsung Nan Lo ,  Chung Hsiung Ho

    IPC: B23K20/00 ,  H05K3/34 ,  H05K1/11 ,  H01L23/00 ,  H01L23/498 ,  B23K20/02 ,  B23K101/36

    Abstract: In a die-substrate assembly, a copper inter-component joint is formed by bonding corresponding copper interconnect structures together directly, without using solder. The copper interconnect structures have distal layers of (111) crystalline copper that enable them to bond together at a relatively low temperature (e.g., below 300° C.) compared to the relatively high melting point (about 1085° C.) for the bulk copper of the rest of the interconnect structures. By avoiding the use of solder, the resulting inter-component joint will not suffer from the adverse IMC/EM effects of conventional, solder-based joints. The distal surfaces of the interconnect structures may be curved (e.g., one concave and the other convex) to facilitate mating the two structures and improve the reliability of the physical contact between the two interconnect structures. The bonding may be achieved using directed microwave radiation and microwave-sensitive flux, instead of uniform heating.

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