公开(公告)号：US09160052B2

公开(公告)日：2015-10-13

申请号：US13781564

申请日：2013-02-28

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Patrice Gamand ,  Sidina Wane

IPC: H01P5/18

CPC classification number: H01P5/186

Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.

Abstract translation: Lange耦合器包括一个不间断的外围接地导体，其围绕分别耦合到兰格耦合器的输入，通过，耦合和隔离端口的输入，通过，耦合和隔离的导体条，其中外围接地导体和输入和通过导体条布置在 第一金属层。

公开(公告)号：US09500681B2

公开(公告)日：2016-11-22

申请号：US14030079

申请日：2013-09-18

Applicant: NXP B.V.

Inventor： Claire Boucey ,  Fabian Rivière ,  Sidina Wane

IPC: G01R21/00 ,  H03F3/45 ,  H04B17/318

CPC classification number: G01R21/00 ,  G01R15/09 ,  G01R21/12 ,  G01R35/005 ,  H03F3/45197 ,  H04B17/318

Abstract: An FET RF signal detector circuit comprising two unbalanced differential transistor pair circuits is disclosed. A current mirror output circuit is included for generating an output current derived from currents flowing in the differential transistor pair circuits. The first unbalanced differential transistor pair circuit comprises two branches, each with a respective tail, and a first variable resistor between the branch tails. The first unbalanced differential transistor pair circuit connects to a first current source tail arrangement. The second unbalanced differential transistor pair circuit comprises two branches, each with a respective tail, and a second variable resistor between the branch tails. The second unbalanced differential transistor pair circuit connects to a second current source tail arrangement.

Abstract translation: 公开了一种包括两个不平衡差分晶体管对电路的FET RF信号检测器电路。 包括电流镜输出电路，用于产生从在差动晶体管对电路中流动的电流得到的输出电流。 第一不平衡差分晶体管对电路包括两个分支，每个分支具有相应的尾部，以及分支尾部之间的第一可变电阻器。 第一不平衡差分晶体管对电路连接到第一电流源尾布置。 第二不平衡差分晶体管对电路包括两个分支，每个分支具有相应的尾部，以及在分支尾部之间的第二可变电阻器。 第二不平衡差分晶体管对电路连接到第二电流源尾布置。

公开(公告)号：US20140091814A1

公开(公告)日：2014-04-03

申请号：US14030079

申请日：2013-09-18

Applicant: NXP B.V.

Inventor： Claire Boucey ,  Fabian Rivière ,  Sidina Wane

IPC: G01R21/00

CPC classification number: G01R21/00 ,  G01R15/09 ,  G01R21/12 ,  G01R35/005 ,  H03F3/45197 ,  H04B17/318

Abstract: An FET RF signal detector circuit comprising two unbalanced differential transistor pair circuits is disclosed. A current mirror output circuit is included for generating an output current derived from currents flowing in the differential transistor pair circuits. The first unbalanced differential transistor pair circuit comprises two branches, each with a respective tail, and a first variable resistor between the branch tails. The first unbalanced differential transistor pair circuit connects to a first current source tail arrangement. The second unbalanced differential transistor pair circuit comprises two branches, each with a respective tail, and a second variable resistor between the branch tails. The second unbalanced differential transistor pair circuit connects to a second current source tail arrangement.

Abstract translation: 公开了一种包括两个不平衡差分晶体管对电路的FET RF信号检测器电路。 包括电流镜输出电路，用于产生从在差动晶体管对电路中流动的电流得到的输出电流。 第一不平衡差分晶体管对电路包括两个分支，每个分支具有相应的尾部，以及分支尾部之间的第一可变电阻器。 第一不平衡差分晶体管对电路连接到第一电流源尾布置。 第二不平衡差分晶体管对电路包括两个分支，每个分支具有相应的尾部，以及在分支尾部之间的第二可变电阻器。 第二不平衡差分晶体管对电路连接到第二电流源尾布置。

公开(公告)号：US20130229239A1

公开(公告)日：2013-09-05

申请号：US13781564

申请日：2013-02-28

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Patrice Gamand ,  Sidina Wane

IPC: H01P5/18

CPC classification number: H01P5/186

Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.

Abstract translation: Lange耦合器包括一个不间断的外围接地导体，其围绕分别耦合到兰格耦合器的输入，通过，耦合和隔离端口的输入，通过，耦合和隔离的导体条，其中外围接地导体和输入和通过导体条布置在 第一金属层。