公开(公告)号：US10250197B1

公开(公告)日：2019-04-02

申请号：US15804268

申请日：2017-11-06

Applicant: NXP USA, Inc.

Inventor： Joseph Schultz ,  Enver Krvavac ,  Yu-Ting David Wu ,  Nick Yang ,  Jeffrey Jones ,  Mario Bokatius ,  Ricardo Uscola

IPC: H03F1/02 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/04 ,  H01L23/66

Abstract: A multiple-stage amplifier includes a driver stage die and a final stage die. The final stage die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a first transistor. The driver stage die includes another type of semiconductor substrate (e.g., a silicon substrate), a second transistor, and one or more secondary circuits that are electrically coupled to a control terminal of the first transistor. A connection (e.g., a wirebond array or other DC-coupled connection) is electrically coupled between an RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die. The secondary circuit(s) of the driver stage die include a final stage bias circuit and/or a final stage harmonic control circuit, which are electrically connected to the final stage die through various connections.