公开(公告)号：US11407940B2

公开(公告)日：2022-08-09

申请号：US17166788

申请日：2021-02-03

申请人： Nanosys, Inc.

发明人： Ravisubhash Tangirala ,  Jay Yamanaga ,  Wenzhou Guo ,  Christopher Sunderland ,  Ashenafi Damtew Mamuye ,  Chunming Wang ,  Eunhee Hwang ,  Nahyoung Kim

IPC分类号： C09K11/02 ,  C09K11/62 ,  B32B15/04 ,  B32B15/09 ,  B32B17/06 ,  B29B7/90 ,  C08J5/18 ,  G02B1/00 ,  G02F1/13357 ,  G02F1/1335 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

摘要： Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.