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公开(公告)号:US11104847B2
公开(公告)日:2021-08-31
申请号:US16751646
申请日:2020-01-24
申请人: Nanosys, Inc.
摘要: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD450/mass ratio. The invention also relates to methods of producing such nanostructures.
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公开(公告)号:US11407940B2
公开(公告)日:2022-08-09
申请号:US17166788
申请日:2021-02-03
申请人: Nanosys, Inc.
发明人: Ravisubhash Tangirala , Jay Yamanaga , Wenzhou Guo , Christopher Sunderland , Ashenafi Damtew Mamuye , Chunming Wang , Eunhee Hwang , Nahyoung Kim
IPC分类号: C09K11/02 , C09K11/62 , B32B15/04 , B32B15/09 , B32B17/06 , B29B7/90 , C08J5/18 , G02B1/00 , G02F1/13357 , G02F1/1335 , B82Y20/00 , B82Y30/00 , B82Y40/00
摘要: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
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公开(公告)号:US10927294B2
公开(公告)日:2021-02-23
申请号:US16905721
申请日:2020-06-18
申请人: Nanosys, Inc.
发明人: Ashenafi Damtew Mamuye , Christopher Sunderland , Ilan Jen-La Plante , Chunming Wang , John J. Curley
摘要: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
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