公开(公告)号：US08295015B2

公开(公告)日：2012-10-23

申请号：US12320878

申请日：2009-02-06

申请人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

发明人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

摘要翻译： 本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。 磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。 磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

公开(公告)号：US20100202088A1

公开(公告)日：2010-08-12

申请号：US12320878

申请日：2009-02-06

申请人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

发明人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

摘要翻译： 本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。 磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。 磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

公开(公告)号：US08451003B2

公开(公告)日：2013-05-28

申请号：US12844091

申请日：2010-07-27

申请人： Hiroshi Yamazaki ,  Hiraku Hirabayashi ,  Naoki Ohta

发明人： Hiroshi Yamazaki ,  Hiraku Hirabayashi ,  Naoki Ohta

IPC分类号： G01R33/09

CPC分类号： G01R33/091 ,  G01D5/145

摘要： A magnetic sensor having first to fourth magneto-resistive elements, where the first and second magneto-resistive elements are connected at respective ends through a first connecting portion in a central region, and the third and fourth magneto-resistive elements are connected at respective ends through a second connecting portion that is parallel to the first connecting portion. The first and fourth magneto-resistive elements are connected at respective other ends through a third connecting portion, and the second and third magneto-resistive elements are connected at respective other ends through a fourth connecting portion. Depending on an external signal magnetic field, resistance values of the first and third magneto-resistive elements change in a same increasing or decreasing direction, whereas resistance values of the second and fourth magneto-resistive elements change in an increasing or decreasing direction opposite to the direction of the first and third magneto-resistive elements.

摘要翻译： 一种具有第一至第四磁阻元件的磁传感器，其中第一和第二磁阻元件通过中心区域中的第一连接部分在各自的端部连接，第三和第四磁阻元件在各自的端部连接 通过与第一连接部分平行的第二连接部分。 第一和第四磁阻元件在相应的另一端通过第三连接部连接，并且第二和第三磁阻元件通过第四连接部在相应的另一端连接。 取决于外部信号磁场，第一和第三磁阻元件的电阻值以相同的增加或减小的方向变化，而第二和第四磁阻元件的电阻值在与 第一和第三磁阻元件的方向。

公开(公告)号：US20090109577A1

公开(公告)日：2009-04-30

申请号：US11924246

申请日：2007-10-25

申请人： Hiroshi Yamazaki ,  Naoki Ohta

发明人： Hiroshi Yamazaki ,  Naoki Ohta

IPC分类号： G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： The invention provides a magneto-resistive effect device of the CPP structure comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled via the nonmagnetic intermediate layer such that the magnetizations of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel with each other, wherein the mutually antiparallel magnetizations of two magnetic layers lie in a medium opposite plane or front to rear direction and in a rear to front direction. The second ferromagnetic layer is divided by a nonmagnetic intervening layer into a front second ferromagnetic layer and a rear second ferromagnetic layer on the way from the front to the rear, and the front second ferromagnetic layer and a front portion of the first ferromagnetic layer located at a position that makes a pair with the front second ferromagnetic layer via the nonmagnetic intermediate layer defines a substantial magnetic sensor portion with a sense current applied to it in a stacking direction. It is thus possible not only to make use of a structure capable of narrowing the read gap (between the upper and the lower shield) to make improvements in linear recording densities thereby meeting recent demands for ultra-high density recording, but also to get around a problem of unneeded information being written on the medium (media) and make the device less likely to be affected by the magnetic field, thereby enhancing the stability of operation of the device itself as well.

摘要翻译： 本发明提供一种包括非磁性中间层的CPP结构的磁阻效应器件，以及堆叠在一起形成有夹在它们之间的非磁性中间层的第一铁磁层和第二铁磁层。 第一铁磁层和第二铁磁层经由非磁性中间层磁耦合，使得第一铁磁层和第二铁磁层的磁化彼此反平行，其中两个磁性层的相互反平行磁化位于介质中 相反的平面或从前到后的方向和从前到后的方向。 第二铁磁层由非磁性中间层分成前后第二铁磁层和后第二铁磁层，前后第二铁磁层和第一铁磁层的前部分位于第一铁磁层 通过非磁性中间层与前部第二铁磁层成对配置的位置限定了在层叠方向上施加有感测电流的实质的磁性传感器部分。 因此，不仅可以利用能够缩小读取间隙（上下屏蔽之间）的结构，从而提高线性记录密度，从而满足最近对超高密度记录的需求，而且可以绕过 不需要的信息被写入介质（介质）的问题，并且使得该设备不太可能受到磁场的影响，从而增强了设备本身的操作的稳定性。

公开(公告)号：US07894166B2

公开(公告)日：2011-02-22

申请号：US11924246

申请日：2007-10-25

申请人： Hiroshi Yamazaki ,  Naoki Ohta

发明人： Hiroshi Yamazaki ,  Naoki Ohta

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magneto-resistive effect device of a CPP structure includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled via the nonmagnetic intermediate layer such that magnetizations of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel with each other. Mutually antiparallel magnetizations of two magnetic layers lie in a medium opposite plane or front to rear direction and in a rear to front direction. The second ferromagnetic layer is divided by a nonmagnetic intervening layer into a front second ferromagnetic layer and a rear second ferromagnetic layer on the way from the front to the rear.

摘要翻译： CPP结构的磁阻效应器件包括非磁性中间层以及堆叠在一起形成有非磁性中间层的第一铁磁层和第二铁磁层。 第一铁磁层和第二铁磁层经由非磁性中间层磁耦合，使得第一铁磁层和第二铁磁层的磁化彼此反平行。 两个磁性层的相互反平行磁化位于相对的平面或前后方向的介质中，并且位于从前到后的方向上。 第二铁磁层在从前到后的路上被非磁性中间层分成前第二铁磁层和后第二铁磁层。

公开(公告)号：US20110068786A1

公开(公告)日：2011-03-24

申请号：US12880599

申请日：2010-09-13

申请人： Naoki OHTA ,  Koichi Terunuma ,  Satoshi Miura ,  Masanori Sakai ,  Hiroshi Yamazaki

发明人： Naoki OHTA ,  Koichi Terunuma ,  Satoshi Miura ,  Masanori Sakai ,  Hiroshi Yamazaki

IPC分类号： G01R33/02 ,  B05D3/02 ,  B05D5/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/0052

摘要： A magnetic sensor includes: a first and a second magnetoresistive elements each including: a magnetization free layer; a nonmagnetic spacing layer; a magnetization pinned layer having one or more first layers of a first group of ferromagnetic layers and one or more second layers of a second group of ferromagnetic layers, in which the first layer and the second layer are stacked alternately with a nonmagnetic coupling layer in between, and so antiferromagnetically coupled to each other as to have opposite magnetizations to each other; and an antiferromagnetic layer pinning magnetization orientation in the one or more first and the second layers. The first layers in the first magnetoresistive element are one more in number than that of the one or more second layers. The number of the one or more first layers and that of the one or more second layers in the second magnetoresistive element are equal.

摘要翻译： 磁传感器包括：第一和第二磁阻元件，每个包括：无磁化层; 非磁性间隔层; 磁化固定层，其具有第一组铁磁层组的一个或多个第一层和第二组铁磁层组的一个或多个第二层，其中第一层和第二层与其间的非磁性耦合层交替堆叠 并且因此彼此反铁磁耦合以具有彼此相反的磁化; 以及在一个或多个第一和第二层中钉扎磁化取向的反铁磁层。 第一磁阻元件中的第一层数量多于一个或多个第二层的数量。 一个或多个第一层的数量以及第二磁阻元件中的一个或多个第二层的数量相等。

公开(公告)号：US20090130491A1

公开(公告)日：2009-05-21

申请号：US11984243

申请日：2007-11-15

申请人： Naoki Ohta ,  Hiroshi Yamazaki

发明人： Naoki Ohta ,  Hiroshi Yamazaki

IPC分类号： G11B5/39 ,  B05D5/12 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magnetoresistive element (MR element) for reading a change in a magnetic field of a magnetic recording medium includes first and second electrode layers for providing a sensing current, which are perpendicular to an air bearing surface (ABS) facing the magnetic recording medium, first and second free layers which have a magnetization direction which changes in accordance with an external magnetic field, and a spacer layer composed of non-magnetic material. A ratio of a representative width and a representative length of each of the first and second free layers is at least 2 to 1, to thereby provide initial magnetizations along a direction of the representative length of each of the first and second free layers.

摘要翻译： 用于读取磁记录介质的磁场变化的磁阻元件（MR元件）包括用于提供感测电流的第一和第二电极层，第一和第二电极层垂直于面向磁记录介质的空气轴承表面（ABS），第一 以及具有根据外部磁场而变化的磁化方向的第二自由层和由非磁性材料构成的间隔层。 第一自由层和第二自由层中的每个的代表性宽度和代表性长度的比率至少为2比1，从而沿着第一和第二自由层的每个的代表性长度的方向提供初始磁化。

公开(公告)号：US08786280B2

公开(公告)日：2014-07-22

申请号：US12845992

申请日：2010-07-29

申请人： Hiroshi Yamazaki ,  Hiraku Hirabayashi ,  Naoki Ohta

发明人： Hiroshi Yamazaki ,  Hiraku Hirabayashi ,  Naoki Ohta

IPC分类号： G01R33/02

CPC分类号： G01R33/091 ,  G01R33/0005

摘要： A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections.

摘要翻译： 用于感测外部施加的磁性的变化的传感器的磁电阻效应元件包括具有固定的磁化方向的固定层，具有响应于外部磁场而变化的磁化方向的自由层，以及设置在 钉扎层和自由层。 被钉扎层具有在固定磁化方向上长的并且在与固定磁化方向正交的方向上短的平面形状。 此外，被钉扎层优选具有其中被钉扎层被分成多个部分的平面形状。

公开(公告)号：US08786278B2

公开(公告)日：2014-07-22

申请号：US13493495

申请日：2012-06-11

申请人： Naoki Ohta ,  Hiroshi Yamazaki

发明人： Naoki Ohta ,  Hiroshi Yamazaki

IPC分类号： G01R33/02 ,  G01R33/09

CPC分类号： G01R33/093 ,  G01R33/098

摘要： A three-dimensional magnetic field sensor includes a substrate having an element placement surface that is planar, and first, second and third MR elements disposed on a side of the element placement surface of the substrate and integrated with the substrate. Each of the first, second and third MR elements includes a magnetization pinned layer, a nonmagnetic layer, and a free layer. The magnetization pinned layer of the first MR element has a magnetization direction that is pinned in an X direction parallel to the element placement surface. The magnetization pinned layer of the second MR element has a magnetization direction that is pinned in a Y direction parallel to the element placement surface and different from the X direction. The magnetization pinned layer of the third MR element has a magnetization direction that is pinned in a Z direction perpendicular to the element placement surface.

摘要翻译： 三维磁场传感器包括具有平面的元件放置表面的基板，以及设置在基板的元件放置表面侧并与基板一体化的第一和第三MR元件。 第一，第二和第三MR元件中的每一个包括磁化钉扎层，非磁性层和自由层。 第一MR元件的磁化固定层具有在平行于元件放置表面的X方向上销钉的磁化方向。 第二MR元件的磁化固定层具有被固定在与元件放置表面平行的Y方向并且与X方向不同的磁化方向。 第三MR元件的磁化固定层具有被固定在与元件放置表面垂直的Z方向上的磁化方向。

公开(公告)号：US08310792B2

公开(公告)日：2012-11-13

申请号：US11984243

申请日：2007-11-15

申请人： Naoki Ohta ,  Hiroshi Yamazaki

发明人： Naoki Ohta ,  Hiroshi Yamazaki

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magnetoresistive element (MR element) for reading a change in a magnetic field of a magnetic recording medium includes first and second electrode layers for providing a sensing current, which are perpendicular to an air bearing surface (ABS) facing the magnetic recording medium, first and second free layers which have a magnetization direction which changes in accordance with an external magnetic field, and a spacer layer composed of non-magnetic material. A ratio of a representative width and a representative length of each of the first and second free layers is at least 2 to 1, to thereby provide initial magnetizations along a direction of the representative length of each of the first and second free layers.

摘要翻译： 用于读取磁记录介质的磁场变化的磁阻元件（MR元件）包括用于提供感测电流的第一和第二电极层，第一和第二电极层垂直于面向磁记录介质的空气轴承表面（ABS），第一 以及具有根据外部磁场而变化的磁化方向的第二自由层和由非磁性材料构成的间隔层。 第一自由层和第二自由层中的每个的代表性宽度和代表性长度的比率至少为2比1，从而沿着第一和第二自由层的每个的代表性长度的方向提供初始磁化。