公开(公告)号：US20160155904A1

公开(公告)日：2016-06-02

申请号：US14556701

申请日：2014-12-01

Applicant: National Chung Shan Institute of Science and Technology

Inventor： SHIH-CHANG LIANG ,  KE-DING LI ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: H01L33/42 ,  H01L29/43 ,  H01L31/0224

CPC classification number: H01L33/42 ,  H01L29/43 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483

Abstract: A high-conductivity thin-film structure for reducing metal contact resistance is disposed between a substrate and at least a metal electrode of a photoelectric component, characterized in that the thin-film structure has a first conductive layer and a second conductive layer, wherein the first conductive layer is a non-crystalline transparent conductive thin-film deposited on a lateral surface of the substrate, and the second conductive layer is a crystalline transparent conductive thin-film deposited on a lateral surface of the first conductive layer, wherein another surface of the second conductive layer is in contact with the metal electrode to serve as a conduction medium between the first conductive layer and the metal electrode. Therefore, the thin-film structure exhibits high conductivity, high transmittance, low contact resistance toward the metal electrode, and insusceptibility to unfavorable effects of coarseness of the surface of the substrate.

Abstract translation: 用于降低金属接触电阻的高导电性薄膜结构设置在基板和至少光电部件的金属电极之间，其特征在于，所述薄膜结构具有第一导电层和第二导电层，其中， 第一导电层是沉积在衬底的侧表面上的非结晶透明导电薄膜，并且第二导电层是沉积在第一导电层的侧表面上的结晶透明导电薄膜，其中另一个表面 第二导电层与金属电极接触，用作第一导电层和金属电极之间的导电介质。 因此，薄膜结构显示出高导电性，高透射率，对金属电极的低接触电阻，以及不利于衬底表面的粗糙度的不利影响。