公开(公告)号：US20160047033A1

公开(公告)日：2016-02-18

申请号：US14715618

申请日：2015-05-19

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SHIH-CHANG LIANG ,  WEI-CHIEH HUANG ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: C23C14/24

CPC classification number: C23C14/243 ,  C23C14/0623

Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.

Abstract translation: 线性蒸发装置包括隔热室，坩埚，蒸发材料加热器和安装在隔热室中的混合室。 混合室包括流动限制和调节层，流路调节构件，混合层和线性蒸发层。 流量限制和调节层是分别与坩埚相对应的流动极限孔的矩形片材; 流动通道调节构件是具有与一些流动限制孔和至少一个流出口相对应的至少一个流入口的互连结构，并且混合层是基本上为I形的片状结构，并且线性蒸发层为 具有从两端向中间逐渐变细的线性源蒸发口的矩形片材，以提高薄膜的均匀性和蒸发材料的利用。

公开(公告)号：US20160312355A1

公开(公告)日：2016-10-27

申请号：US15201620

申请日：2016-07-05

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SHIH-CHANG LIANG ,  WEI-CHIEH HUANG ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: C23C14/24

CPC classification number: C23C14/24 ,  C23C14/243

Abstract: In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract translation: 在用于蒸发沉积均匀薄膜的方法和装置中，在保持恒定沉积速率的同时，将膜沉积在真空环境的基板上。 一个盖子安装在蒸发容器的墙壁上。 当蒸发材料被加热到蒸发状态并且蒸发容器的内部达到第一蒸气饱和压力时，蒸发材料的蒸气朝向压力稳定室流动。 当压力稳定室达到小于第一蒸汽饱和压力的第二蒸气饱和压力时，真空环境的真空背景压力小于第二蒸汽饱和压力，使得蒸发材料蒸汽从压力稳定 由于压力差，以恒定速率朝向真空环境室，以便使基板蒸发。

公开(公告)号：US20160097117A1

公开(公告)日：2016-04-07

申请号：US14716882

申请日：2015-05-20

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SHIH-CHANG LIANG ,  WEI-CHIEH HUANG ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: C23C14/24

CPC classification number: C23C14/24 ,  C23C14/243

Abstract: In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract translation: 在用于蒸发沉积均匀薄膜的方法和装置中，在保持恒定沉积速率的同时，将膜沉积在真空环境的基板上。 一个盖子安装在蒸发容器的墙壁上。 当蒸发材料被加热到蒸发状态并且蒸发容器的内部达到第一蒸气饱和压力时，蒸发材料的蒸气朝向压力稳定室流动。 当压力稳定室达到小于第一蒸汽饱和压力的第二蒸气饱和压力时，真空环境的真空背景压力小于第二蒸汽饱和压力，使得蒸发材料蒸汽从压力稳定 由于压力差，以恒定速率朝向真空环境室，以便使基板蒸发。

公开(公告)号：US20180148828A1

公开(公告)日：2018-05-31

申请号：US15641330

申请日：2017-07-05

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： TE-JU CHUNG ,  WEN-CHIEH LI ,  SHIH-CHANG LIANG ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: C23C14/24 ,  C23C14/54

CPC classification number: C23C14/243 ,  C23C14/541 ,  C23C14/545

Abstract: In an apparatus for quantifying the amount of evaporation deposition of a solid substance and its method, the apparatus is connected to a reaction chamber, and a solid substance to be evaporated, a heating source and a load cell are disposed in a heating chamber. The load cell is for detecting the weight of the solid substance, and the reduced weight of the solid substance to be evaporated per unit time is equal to the mass flow of the reaction gas, so that the status of the reaction gas can be known by the weight simultaneously. When the solid substance is heated to a state to form the reaction gas, the heating chamber reaches a saturated vapor pressure greater than a vacuum background pressure of the reaction chamber, the reaction gas continues to flow along the pipeline stably towards the reaction chamber to manufacture a thin film.

公开(公告)号：US20160155904A1

公开(公告)日：2016-06-02

申请号：US14556701

申请日：2014-12-01

Applicant: National Chung Shan Institute of Science and Technology

Inventor： SHIH-CHANG LIANG ,  KE-DING LI ,  CHAO-NAN WEI ,  CUO-YO NI ,  HUI-YUN BOR

IPC: H01L33/42 ,  H01L29/43 ,  H01L31/0224

CPC classification number: H01L33/42 ,  H01L29/43 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483

Abstract: A high-conductivity thin-film structure for reducing metal contact resistance is disposed between a substrate and at least a metal electrode of a photoelectric component, characterized in that the thin-film structure has a first conductive layer and a second conductive layer, wherein the first conductive layer is a non-crystalline transparent conductive thin-film deposited on a lateral surface of the substrate, and the second conductive layer is a crystalline transparent conductive thin-film deposited on a lateral surface of the first conductive layer, wherein another surface of the second conductive layer is in contact with the metal electrode to serve as a conduction medium between the first conductive layer and the metal electrode. Therefore, the thin-film structure exhibits high conductivity, high transmittance, low contact resistance toward the metal electrode, and insusceptibility to unfavorable effects of coarseness of the surface of the substrate.

Abstract translation: 用于降低金属接触电阻的高导电性薄膜结构设置在基板和至少光电部件的金属电极之间，其特征在于，所述薄膜结构具有第一导电层和第二导电层，其中， 第一导电层是沉积在衬底的侧表面上的非结晶透明导电薄膜，并且第二导电层是沉积在第一导电层的侧表面上的结晶透明导电薄膜，其中另一个表面 第二导电层与金属电极接触，用作第一导电层和金属电极之间的导电介质。 因此，薄膜结构显示出高导电性，高透射率，对金属电极的低接触电阻，以及不利于衬底表面的粗糙度的不利影响。