公开(公告)号：US20200152825A1

公开(公告)日：2020-05-14

申请号：US16663358

申请日：2019-10-25

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo ,  Cheng-Hung Shih ,  Hong-Ting Huang

IPC: H01L33/00

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

公开(公告)号：US10923621B2

公开(公告)日：2021-02-16

申请号：US16663358

申请日：2019-10-25

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo ,  Cheng-Hung Shih ,  Hong-Ting Huang

IPC: H01L23/373 ,  H01L33/00 ,  H01L23/15 ,  H05K1/02 ,  H05K3/38 ,  H01L23/498 ,  H05K1/03 ,  H01L23/00 ,  H01L21/48

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.