公开(公告)号：US20200152825A1

公开(公告)日：2020-05-14

申请号：US16663358

申请日：2019-10-25

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo ,  Cheng-Hung Shih ,  Hong-Ting Huang

IPC: H01L33/00

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

公开(公告)号：US10060036B2

公开(公告)日：2018-08-28

申请号：US14959285

申请日：2015-12-04

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo

IPC: B21D39/00 ,  C23C28/02

CPC classification number: C23C28/023 ,  C23C28/021

Abstract: A yellow light photolithographic process and an electroplating process are performed multiple times to produce copper plated layers on the aluminum nitride (AlN) substrate. The copper plated layers are plated in sequence into a stack structure with each layer having reduced length. The parameters of the yellow light photolithographic process can be adjusted, such that each copper plated layer is formed horizontally for a predetermined length into a stack structure of step layers tapering off upward, while a predetermined angle is formed by the tangent line passing through edges of the respective step layers, and the surface of the AlN substrate. An adhesion layer, a copper seed layer, a first copper plated layer, a second copper plated layer, a third copper plated layer, and a nickel plated layer are formed in sequence on the AlN substrate, to form a metalized circuit of multi-layer stack.

公开(公告)号：US10923621B2

公开(公告)日：2021-02-16

申请号：US16663358

申请日：2019-10-25

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo ,  Cheng-Hung Shih ,  Hong-Ting Huang

IPC: H01L23/373 ,  H01L33/00 ,  H01L23/15 ,  H05K1/02 ,  H05K3/38 ,  H01L23/498 ,  H05K1/03 ,  H01L23/00 ,  H01L21/48

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

公开(公告)号：US10144645B1

公开(公告)日：2018-12-04

申请号：US15661045

申请日：2017-07-27

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kuan-Ting Lai ,  Chun-Te Wu ,  Cheng-Hung Shih ,  Yang-Kuo Kuo ,  Lea-Hwung Leu

IPC: C01B21/082

Abstract: A method for preparing spherical aluminum oxynitride powder, comprising the steps of (A) providing an alumina powder and a resin, both of which are then dispersed and dissolved in a solvent to form a mixed slurry; (B) subjecting the mixed slurry to spray drying to form a spherical powder; (C) subjecting the spherical powder to a carbonization treatment under an inert atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to carbothermic reduction in a nitrogen-containing atmosphere at a temperature of 1450° C. to 1550° C.; (E) keeping the spherical powder that has been subjected to carbothermic reduction in the nitrogen-containing atmosphere to carry out a nitridation reaction at a temperature of 1700° C. to 1730° C., forming a nitrided spherical aluminum oxynitride powder; (F) subjecting the nitrided spherical aluminum oxynitride powder to decarbonization in an oxygen-containing atmosphere to form the spherical aluminum oxynitride powder.

公开(公告)号：US10384941B2

公开(公告)日：2019-08-20

申请号：US15839995

申请日：2017-12-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chun-Te Wu ,  Kuan-Ting Lai ,  Cheng-Hung Shih ,  Yang-Kuo Kuo

IPC: C01B21/082

Abstract: A method utilizes easily obtained carbon as carbon source for sintering, followed by high energy ball milling process with planetary ball mill for high energy homogenous mixing of the carbon source, solvent and nano-level silicon dioxide powder, along with a high energy ball milling process repeatedly performed using different sized ball mill beads, so as to formulate a spray granulation slurry with the optimal viscosity, to complete the process of micronization of carbon source evenly encapsulated by silicon dioxide powders. The optimal ratio of C/SiO2 is 1-2.5 to produce a spherical silicon dioxide powder (40-50 μm) evenly encapsulated by the carbon source. The powder is then subjected to a high temperature (1450□) sintering process under nitrogen gas. Lastly, the sintered silicon nitride powder is subjected to homogenizing carbon removal process in a rotational high temperature furnace to complete the fabricating process.

公开(公告)号：US20170159187A1

公开(公告)日：2017-06-08

申请号：US14959285

申请日：2015-12-04

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo

IPC: C23C28/02

CPC classification number: C23C28/023 ,  C23C28/021

Abstract: A yellow light photolithographic process and an electroplating process are performed multiple times to produce copper plated layers on the aluminum nitride (AlN) substrate. The copper plated layers are plated in sequence into a stack structure with each layer having reduced length. The parameters of the yellow light photolithographic process can be adjusted, such that each copper plated layer is formed horizontally for a predetermined length into a stack structure of step layers tapering off upward, while a predetermined angle is formed by the tangent line passing through edges of the respective step layers, and the surface of the AlN substrate. An adhesion layer, a copper seed layer, a first copper plated layer, a second copper plated layer, a third copper plated layer, and a nickel plated layer are formed in sequence on the AlN substrate, to form a metalized circuit of multi-layer stack.