专利检索 ap:("National Institute for Materials Science") AND inv:"Kresna Bondan Fathoni" 第 1 页

1.

发明授权
Magnetoresistive element, magnetic sensor, reproducing head, and magnetic recording and reproducing device 有权

公开(公告)号：US11521645B2

公开(公告)日：2022-12-06

申请号：US17295124

申请日：2019-06-27

申请人： National Institute for Materials Science

发明人： Kresna Bondan Fathoni , Yuya Sakuraba , Taisuke Sasaki , Tomoya Nakatani , Yoshio Miura , Kazuhiro Hono

IPC分类号： G11B5/39 , H01L43/02 , G01R33/09 , H01L43/08 , H01L43/10

摘要： The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.