公开(公告)号：US20200035283A1

公开(公告)日：2020-01-30

申请号：US16603343

申请日：2018-04-04

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yoichi SHIOTA ,  Takayuki NOZAKI ,  Shinji YUASA

IPC: G11C11/16 ,  H01L43/02

Abstract: According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 Ωμm2. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.