公开(公告)号：US12114515B2

公开(公告)日：2024-10-08

申请号：US17312678

申请日：2019-12-17

Applicant: National Research Council of Canada

Inventor： Jacques Lefebvre ,  Francois Lapointe ,  Zhao Li ,  Jianfu Ding ,  Patrick Roland Lucien Malenfant

IPC: H10K10/46 ,  H10K71/12 ,  H10K85/20

CPC classification number: H10K10/484 ,  H10K71/12 ,  H10K85/221

Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.

公开(公告)号：US20220069243A1

公开(公告)日：2022-03-03

申请号：US17312678

申请日：2019-12-17

Applicant: National Research Council of Canada

Inventor： Jacques Lefebvre ,  Francois Lapointe ,  Zhao Li ,  Jianfu Ding ,  Patrick Roland Lucien Malenfant

IPC: H01L51/05 ,  H01L51/00

Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.