公开(公告)号：US11972947B2

公开(公告)日：2024-04-30

申请号：US17197137

申请日：2021-03-10

申请人： NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY ,  National Institute of Information and Communications Technology

发明人： Yoshiyuki Suda ,  Takahiro Tsukamoto ,  Akira Motohashi ,  Kyohei Degura ,  Katsumi Okubo ,  Takuma Yagi ,  Akifumi Kasamatsu ,  Nobumitsu Hirose ,  Toshiaki Matsui

IPC分类号： H01L21/02 ,  C23C14/06 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  H01L29/161 ,  H01L29/165 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/88

CPC分类号： H01L21/02381 ,  C23C14/06 ,  C23C14/14 ,  C23C14/165 ,  C23C14/34 ,  H01L21/02365 ,  H01L21/02532 ,  H01L21/02631 ,  H01L29/161 ,  H01L29/165 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/88

摘要： A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t≤0.881×x−4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

公开(公告)号：US11492696B2

公开(公告)日：2022-11-08

申请号：US16317751

申请日：2017-07-12

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  National Institute of Information and Communications Technology

发明人： Yoshiyuki Suda ,  Takahiro Tsukamoto ,  Akira Motohashi ,  Kyohei Degura ,  Katsumi Okubo ,  Takuma Yagi ,  Akifumi Kasamatsu ,  Nobumitsu Hirose ,  Toshiaki Matsui

IPC分类号： C23C14/34 ,  H01L21/203 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/88 ,  C23C14/06 ,  H01L29/161 ,  C23C14/14 ,  H01L29/165

摘要： A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x−4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.