公开(公告)号：US20230013188A1

公开(公告)日：2023-01-19

申请号：US17812385

申请日：2022-07-13

Applicant: Navitas Semiconductor Limited

Inventor： George Chu ,  Nick Fichtenbaum ,  Kai-Ling Chiu ,  Daniel M. Kinzer ,  Maher Hamdan ,  Pil Sung Park

IPC: H01L21/78 ,  H01L23/522

Abstract: Structures and related techniques for singulating GaN-on-Si wafers are disclosed. In one aspect, a semiconductor wafer includes a silicon layer, and a gallium nitride (GaN) layer disposed on the silicon layer and defining a plurality of trenches that each extend to the silicon layer. In another aspect, the GaN layer includes one or more gallium nitride layers of different compositions. In yet another aspect, the wafer includes a plurality of dielectric layers disposed on the GaN layer. In yet another aspect, each of the plurality of trenches has a depth that is equal to a sum of a thickness of the GaN layer and a thickness of the plurality of the dielectric layers.