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1.发明授权Methods of forming polycrystalline elements and structures formed by such methods 有权通过这种方法形成多晶元素和结构的方法公开(公告)号：US08882869B2
公开(公告)日：2014-11-11
申请号：US13040947
申请日：2011-03-04
IPC分类号： B24D3/00 , B24D3/10 , B32B33/00 , B24D18/00 , E21B10/573 , B24D99/00 , C22C26/00 , C22C1/05 , C22C29/06 , C22C29/14
CPC分类号： E21B10/22 , B22F2999/00 , B24D3/06 , B24D18/0009 , B24D99/005 , C22C1/051 , C22C26/00 , C22C29/06 , C22C29/14 , C22C2204/00 , E21B10/573 , E21B10/5735 , F16C17/00 , F16C17/02 , F16C17/04 , F16C17/12 , F16C33/043 , F16C33/121 , F16C33/26 , F16C2352/00 , Y10T428/24521 , B22F3/14
摘要： Methods of forming a polycrystalline element comprise forming a polycrystalline table on a first substrate. Catalyst material may be removed from at least a portion of the polycrystalline table. The polycrystalline table and a portion of a first substrate attached to the polycrystalline table may be removed from a remainder of the first substrate. The portion of the first substrate may be attached to another substrate. Polycrystalline elements comprise a polycrystalline table attached to a portion of a first substrate on which the polycrystalline table was formed another substrate attached to the portion of the first substrate.
摘要翻译： 形成多晶元件的方法包括在第一基板上形成多晶台。 催化剂材料可以从多晶表的至少一部分去除。 附着到多晶台上的多晶台和第一衬底的一部分可以从第一衬底的其余部分去除。 第一衬底的部分可以附接到另一衬底。 多晶元件包括附着到第一基板的一部分上的多晶台，多晶台形成在其上附着到第一基板的该部分上的另一基板。
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公开(公告)号：US08858662B2
公开(公告)日：2014-10-14
申请号：US13040861
申请日：2011-03-04
CPC分类号： E21B10/5735 , B22F7/08 , B22F2005/001 , B24D3/14 , B24D18/0009 , B24D99/005 , C04B35/52 , C04B35/58 , C04B35/583 , C04B35/5831 , C04B35/6303 , C04B35/638 , C04B35/645 , C04B37/001 , C04B37/021 , C04B2235/3856 , C04B2235/386 , C04B2235/405 , C04B2235/427 , C04B2235/602 , C04B2235/608 , C04B2235/61 , C04B2235/661 , C04B2237/36 , C04B2237/361 , C04B2237/363 , C04B2237/401 , C22C26/00 , C22C2204/00 , E21B10/50 , E21B10/55 , E21B10/5673 , F16C33/043
摘要： Methods of forming a polycrystalline table comprise disposing a plurality of particles comprising a superabrasive material, a substrate comprising a hard material, and a catalyst material in a mold. The plurality of particles is partially sintered in the presence of the catalyst material to form a brown polycrystalline table having a first permeability attached to an end of the substrate. The substrate is removed from the brown polycrystalline table and catalyst material is removed from the brown polycrystalline table. The brown polycrystalline table is then fully sintered to form a polycrystalline table having a reduced, second permeability. Intermediate structures formed during a process of attaching a polycrystalline table to a substrate comprise a substantially fully leached brown polycrystalline table. The substantially fully leached brown polycrystalline table comprises a plurality of interbonded grains of a superabrasive material.
摘要翻译： 形成多晶台的方法包括在模具中设置包括超硬磨料材料的多个颗粒，包含硬质材料的底物和催化剂材料。 多个颗粒在催化剂材料的存在下被部分烧结，以形成一个棕色多晶表，其具有附着在基底端部的第一渗透性。 从棕色多晶表中除去底物，从棕色多晶表中除去催化剂材料。 然后将棕色多晶表完全烧结以形成具有减小的第二渗透性的多晶台。 在将多晶台附着到衬底的过程中形成的中间结构包括基本上完全浸出的棕色多晶表。 基本上完全浸出的棕色多晶表包括多个超级磨料材料的接合晶粒。
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3.发明申请METHODS OF FORMING POLYCRYSTALLINE ELEMENTS AND STRUCTURES FORMED BY SUCH METHODS 有权形成多晶元素的方法和通过这种方法形成的结构公开(公告)号：US20120225253A1
公开(公告)日：2012-09-06
申请号：US13040947
申请日：2011-03-04
CPC分类号： E21B10/22 , B22F2999/00 , B24D3/06 , B24D18/0009 , B24D99/005 , C22C1/051 , C22C26/00 , C22C29/06 , C22C29/14 , C22C2204/00 , E21B10/573 , E21B10/5735 , F16C17/00 , F16C17/02 , F16C17/04 , F16C17/12 , F16C33/043 , F16C33/121 , F16C33/26 , F16C2352/00 , Y10T428/24521 , B22F3/14
摘要： Methods of forming a polycrystalline element comprise forming a polycrystalline table on a first substrate. Catalyst material may be removed from at least a portion of the polycrystalline table. The polycrystalline table and a portion of a first substrate attached to the polycrystalline table may be removed from a remainder of the first substrate. The portion of the first substrate may be attached to another substrate. Polycrystalline elements comprise a polycrystalline table attached to a portion of a first substrate on which the polycrystalline table was formed another substrate attached to the portion of the first substrate.
摘要翻译： 形成多晶元件的方法包括在第一基板上形成多晶台。 催化剂材料可以从多晶表的至少一部分去除。 附着到多晶台的多晶台和第一衬底的一部分可以从第一衬底的其余部分去除。 第一衬底的部分可以附接到另一衬底。 多晶元件包括附着到第一基板的一部分上的多晶台，多晶台形成在其上附着到第一基板的该部分上的另一基板。
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公开(公告)号：US20120222364A1
公开(公告)日：2012-09-06
申请号：US13040921
申请日：2011-03-04
CPC分类号： B24D18/0009 , B24D99/005 , E21B10/5735 , Y10T428/24996 , Y10T428/249981
摘要： Polycrystalline elements comprise a substrate and a polycrystalline table attached to an end of the substrate. The polycrystalline table comprises a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability, the at least second region being interposed between the substrate and the first region. Methods of forming a polycrystalline element comprise attaching a polycrystalline table comprising a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability to an end of a substrate, the at least a second region being interposed between the first region and the substrate. Catalyst material is removed from at least the first region of the polycrystalline table.
摘要翻译： 多晶元件包括附着到基底的端部的基底和多晶台。 所述多晶台包括具有第一渗透率的第一区域和超磨料材料的至少第二区域，所述第二区域具有第二较小渗透性，所述至少第二区域介于所述基底和所述第一区域之间。 形成多晶元件的方法包括附着多晶台，所述多晶台包括具有第一渗透率的第一区域的超级磨料材料和至少第二区域的超级磨料材料，所述超硬磨料材料具有第二较小渗透性至基底的端部，所述至少第二区域 被插入在第一区域和衬底之间。 至少从多晶表的第一区域去除催化剂材料。
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5.发明申请公开(公告)号：US20120222363A1
公开(公告)日：2012-09-06
申请号：US13040861
申请日：2011-03-04
CPC分类号： E21B10/5735 , B22F7/08 , B22F2005/001 , B24D3/14 , B24D18/0009 , B24D99/005 , C04B35/52 , C04B35/58 , C04B35/583 , C04B35/5831 , C04B35/6303 , C04B35/638 , C04B35/645 , C04B37/001 , C04B37/021 , C04B2235/3856 , C04B2235/386 , C04B2235/405 , C04B2235/427 , C04B2235/602 , C04B2235/608 , C04B2235/61 , C04B2235/661 , C04B2237/36 , C04B2237/361 , C04B2237/363 , C04B2237/401 , C22C26/00 , C22C2204/00 , E21B10/50 , E21B10/55 , E21B10/5673 , F16C33/043
摘要： Methods of forming a polycrystalline table comprise disposing a plurality of particles comprising a superabrasive material, a substrate comprising a hard material, and a catalyst material in a mold. The plurality of particles is partially sintered in the presence of the catalyst material to form a brown polycrystalline table having a first permeability attached to an end of the substrate. The substrate is removed from the brown polycrystalline table and catalyst material is removed from the brown polycrystalline table. The brown polycrystalline table is then fully sintered to form a polycrystalline table having a reduced, second permeability. Intermediate structures formed during a process of attaching a polycrystalline table to a substrate comprising a substantially fully leached brown polycrystalline table. The substantially fully leached brown polycrystalline table comprises a plurality of interbonded grains of a superabrasive material.
摘要翻译： 形成多晶台的方法包括在模具中设置包括超硬磨料材料的多个颗粒，包含硬质材料的底物和催化剂材料。 多个颗粒在催化剂材料的存在下被部分烧结，以形成一个棕色多晶表，其具有附着在基底端部的第一渗透性。 从棕色多晶表中除去底物，从棕色多晶表中除去催化剂材料。 然后将棕色多晶表完全烧结以形成具有减小的第二渗透性的多晶台。 在将多晶台附着到包括基本上完全浸出的棕色多晶表的基板的过程中形成的中间结构。 基本上完全浸出的棕色多晶表包括多个超级磨料材料的接合晶粒。
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公开(公告)号：US10099347B2
公开(公告)日：2018-10-16
申请号：US13040921
申请日：2011-03-04
摘要： Polycrystalline elements include a substrate and a polycrystalline table attached to an end of the substrate. The polycrystalline table includes a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability, the at least a second region being interposed between the substrate and the first region. Methods of forming a polycrystalline element involve attaching a polycrystalline table including a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability to an end of a substrate, the at least a second region being interposed between the first region and the substrate. Catalyst material is removed from at least the first region of the polycrystalline table.
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