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1.发明申请Temperature measuring device, thermal processor having temperature measurement function and temperature measurement method 有权温度测量装置，具有温度测量功能和温度测量方法的热处理器公开(公告)号：US20070170170A1
公开(公告)日：2007-07-26
申请号：US11642827
申请日：2006-12-21
IPC分类号： H05B1/02
CPC分类号： H05B1/0233 , H01L21/67248
摘要： This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.
摘要翻译： 本发明提供一种晶片式温度传感器，其能够消除对A / D转换器的需要，适应自动化和提高耐热性，以测量晶片上表面的温度分布，使用该传感器的温度测量装置， 具有温度测量功能和温度测量方法的热处理器。 晶片型温度传感器包括晶片和多个温度传感器，其布置在通过将晶片的上表面分割成多个区域而形成的区域中。 每个温度传感器包括振荡电路，用于响应于电源电压的输入，在与每个区域不同的频带内振荡对应于其自身区域的温度的频率信号。
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公开(公告)号：US07977609B2
公开(公告)日：2011-07-12
申请号：US11642827
申请日：2006-12-21
IPC分类号： H05B1/02
CPC分类号： H05B1/0233 , H01L21/67248
摘要： This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.
摘要翻译： 本发明提供一种晶片式温度传感器，其能够消除对A / D转换器的需要，适应自动化和提高耐热性，以测量晶片上表面的温度分布，使用该传感器的温度测量装置， 具有温度测量功能和温度测量方法的热处理器。 晶片型温度传感器包括晶片和多个温度传感器，其布置在通过将晶片的上表面分割成多个区域而形成的区域中。 每个温度传感器包括振荡电路，用于响应于电源电压的输入，在与每个区域不同的频带内振荡对应于其自身区域的温度的频率信号。
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3.发明授权公开(公告)号：US07923665B2
公开(公告)日：2011-04-12
申请号：US11645616
申请日：2006-12-27
IPC分类号： H05B1/02
CPC分类号： G01K1/026
摘要： An object of the present invention is to provide a wafer-type thermometer capable of adapting itself to automation and improving the heat resistance to measure temperature distribution of a wafer and a method for manufacturing the wafer-type thermometer. A plurality of temperature sensors are arranged in regions formed by segmenting the upper surface of a wafer into a plurality of regions. Output signals from the plurality of temperature sensors are converted into temperature data by a conversion processing circuit where further processes the temperature data. The conversion processing circuit is housed in a storage room surrounded by a heat insulating member made of a nanocrystalline silicon layer.
摘要翻译： 本发明的一个目的是提供一种能够适应自动化和提高耐热性以测量晶片的温度分布的晶片式温度计和晶片式温度计的制造方法。 多个温度传感器被布置在通过将晶片的上表面分割成多个区域而形成的区域中。 来自多个温度传感器的输出信号通过进一步处理温度数据的转换处理电路转换成温度数据。 转换处理电路容纳在由由纳米晶硅层制成的绝热构件包围的储藏室中。
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公开(公告)号：US20090115422A1
公开(公告)日：2009-05-07
申请号：US12254998
申请日：2008-10-21
IPC分类号： G01R29/12
CPC分类号： H01L21/67259 , H01L21/68
摘要： A transfer point of a transfer arm is detected accurately and stably by using a position detecting wafer having an electrostatic capacitance sensor. A position detecting wafer S is formed in a wafer shape transferable by a transfer arm 20 and includes an electrostatic capacitance sensor 50 for detecting a relative position with respect to a reference object by detecting an electrostatic capacitance in relation with the reference object for a position detection. The electrostatic capacitance sensor 50 includes a detection electrode 52 for forming the electrostatic capacitance in relation with the reference object, and the detection electrode 52 is installed on a rear surface of a main body of the wafer shape. Installed on the main body is a guard electrode 100 covering the detecting electrode 52 when viewed from a front surface thereof, for blocking an electric field oriented toward the detection electrode 52 from the front surface.
摘要翻译： 通过使用具有静电电容传感器的位置检测晶片，准确稳定地检测转移臂的转印点。 位置检测用晶片S形成为可由传送臂20转印的晶片形状，并且包括静电电容传感器50，用于通过检测与参考对象相关的位置检测的静电电容来检测相对于参考对象的相对位置 。 静电电容传感器50包括用于与参考对象相关地形成静电电容的检测电极52，并且检测电极52安装在晶片形状的主体的后表面上。 安装在主体上的是从其前表面观察时覆盖检测电极52的保护电极100，用于阻挡从前表面朝向检测电极52的电场。
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公开(公告)号：US20120158355A1
公开(公告)日：2012-06-21
申请号：US13405766
申请日：2012-02-27
CPC分类号： G01B7/003 , H01L21/67259
摘要： A position alignment of a transfer point of a transfer arm is performed by using a position detecting method. The method includes: detecting electrostatic capacitances in relation with a reference object for position alignment by a plurality of electrostatic capacitance detecting electrodes provided on a surface of the substrate body; communicating with each electrostatic capacitance detecting electrode and controlling a detection of each electrostatic capacitance detecting electrode; and calculating coordinates (x, y) of the reference object with respect to the substrate body based on a preset relationship between electrostatic capacitance values of multiple electrostatic capacitance detecting electrodes and a position of the reference object with respect to the substrate body.
摘要翻译： 通过使用位置检测方法来执行传送臂的传送点的位置对准。 所述方法包括：通过设置在所述基板主体的表面上的多个静电电容检测电极来检测与参考对象相关的静电电容以进行位置对准; 与每个静电电容检测电极连通并控制每个静电电容检测电极的检测; 并且基于多个静电电容检测电极的静电电容值与所述基准对象相对于所述基板主体的位置之间的预设关系来计算所述基准对象相对于所述基板主体的坐标（x，y）。
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6.发明授权Position detecting method for performing position alignment of transfer point of transfer arm 有权位置检测方法，用于执行传送臂转印点的位置对准公开(公告)号：US08749257B2
公开(公告)日：2014-06-10
申请号：US13405766
申请日：2012-02-27
IPC分类号： G01R31/00 , G01R31/312
CPC分类号： G01B7/003 , H01L21/67259
摘要： A position alignment of a transfer point of a transfer arm is performed by using a position detecting method. The method includes: detecting electrostatic capacitances in relation with a reference object for position alignment by a plurality of electrostatic capacitance detecting electrodes provided on a surface of the substrate body; communicating with each electrostatic capacitance detecting electrode and controlling a detection of each electrostatic capacitance detecting electrode; and calculating coordinates (x, y) of the reference object with respect to the substrate body based on a preset relationship between electrostatic capacitance values of multiple electrostatic capacitance detecting electrodes and a position of the reference object with respect to the substrate body.
摘要翻译： 通过使用位置检测方法来执行传送臂的传送点的位置对准。 所述方法包括：通过设置在所述基板主体的表面上的多个静电电容检测电极来检测与参考对象相关的静电电容以进行位置对准; 与每个静电电容检测电极连通并控制每个静电电容检测电极的检测; 并且基于多个静电电容检测电极的静电电容值与所述基准对象相对于所述基板主体的位置之间的预设关系来计算所述基准对象相对于所述基板主体的坐标（x，y）。
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公开(公告)号：US08149005B2
公开(公告)日：2012-04-03
申请号：US12182239
申请日：2008-07-30
IPC分类号： G01R31/00 , G01R31/312
CPC分类号： G01B7/003 , H01L21/67259
摘要： A position alignment of a transfer point of a transfer arm is performed by using a position detecting wafer capable of being loaded into an apparatus having a thin transfer port. The position detecting wafer S includes an electrostatic capacitance detecting sensor 50 for detecting an electrostatic capacitance in relation with a reference object for the position alignment. The electrostatic capacitance detecting sensor 50 includes a plurality of electrostatic capacitance detecting electrodes 52, each forming the electrostatic capacitance in relation with the reference object; and a control circuit 51 for controlling a detection of the electrostatic capacitance by each electrostatic capacitance detecting electrode 52, while communicating with each electrostatic capacitance detecting electrode 52. The electrostatic capacitance detecting electrodes 52 are provided on a rear surface of the position detecting wafer S, and the control circuit 51 is provided on a front surface of the position detecting wafer S.
摘要翻译： 通过使用能够加载到具有薄的传送端口的设备的位置检测晶片来执行传送臂的传送点的位置对准。 位置检测用晶片S包括：静电电容检测传感器50，用于检测与位置对准的基准对象有关的静电电容。 静电电容检测传感器50包括多个静电电容检测电极52，每个静电电容检测电极形成与参考对象相关的静电电容; 以及控制电路51，用于在与每个静电电容检测电极52通信的同时控制每个静电电容检测电极52的静电电容的检测。静电电容检测电极52设置在位置检测晶片S的后表面上， 并且控制电路51设置在位置检测晶片S的前表面上。
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公开(公告)号：US07994793B2
公开(公告)日：2011-08-09
申请号：US12254998
申请日：2008-10-21
IPC分类号： G01R29/12
CPC分类号： H01L21/67259 , H01L21/68
摘要： A transfer point of a transfer arm is detected accurately and stably by using a position detecting wafer having an electrostatic capacitance sensor. A position detecting wafer S is formed in a wafer shape transferable by a transfer arm 20 and includes an electrostatic capacitance sensor 50 for detecting a relative position with respect to a reference object by detecting an electrostatic capacitance in relation with the reference object for a position detection. The electrostatic capacitance sensor 50 includes a detection electrode 52 for forming the electrostatic capacitance in relation with the reference object, and the detection electrode 52 is installed on a rear surface of a main body of the wafer shape. Installed on the main body is a guard electrode 100 covering the detecting electrode 52 when viewed from a front surface thereof, for blocking an electric field oriented toward the detection electrode 52 from the front surface.
摘要翻译： 通过使用具有静电电容传感器的位置检测晶片，准确稳定地检测转移臂的转印点。 位置检测用晶片S形成为可由传送臂20转印的晶片形状，并且包括静电电容传感器50，用于通过检测与参考对象相关的位置检测的静电电容来检测相对于参考对象的相对位置 。 静电电容传感器50包括用于与参考对象相关地形成静电电容的检测电极52，并且检测电极52安装在晶片形状的主体的后表面上。 安装在主体上的是从其前表面观察时覆盖检测电极52的保护电极100，用于阻挡从前表面朝向检测电极52的电场。
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公开(公告)号：US20090033908A1
公开(公告)日：2009-02-05
申请号：US12182239
申请日：2008-07-30
CPC分类号： G01B7/003 , H01L21/67259
摘要： A position alignment of a transfer point of a transfer arm is performed by using a position detecting wafer capable of being loaded into an apparatus having a thin transfer port. The position detecting wafer S includes an electrostatic capacitance detecting sensor 50 for detecting an electrostatic capacitance in relation with a reference object for the position alignment. The electrostatic capacitance detecting sensor 50 includes a plurality of electrostatic capacitance detecting electrodes 52, each forming the electrostatic capacitance in relation with the reference object; and a control circuit 51 for controlling a detection of the electrostatic capacitance by each electrostatic capacitance detecting electrode 52, while communicating with each electrostatic capacitance detecting electrode 52. The electrostatic capacitance detecting electrodes 52 are provided on a rear surface of the position detecting wafer S, and the control circuit 51 is provided on a front surface of the position detecting wafer S.
摘要翻译： 通过使用能够加载到具有薄的传送端口的设备的位置检测晶片来执行传送臂的传送点的位置对准。 位置检测用晶片S包括：静电电容检测传感器50，用于检测与位置对准的基准对象有关的静电电容。 静电电容检测传感器50包括多个静电电容检测电极52，每个静电电容检测电极形成与参考对象相关的静电电容; 以及控制电路51，用于在与每个静电电容检测电极52通信的同时控制每个静电电容检测电极52的静电电容的检测。静电电容检测电极52设置在位置检测晶片S的后表面上， 并且控制电路51设置在位置检测晶片S的前表面上。
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10.发明申请公开(公告)号：US20070147468A1
公开(公告)日：2007-06-28
申请号：US11645616
申请日：2006-12-27
IPC分类号： G01K1/00
CPC分类号： G01K1/026
摘要： An object of the present invention is to provide a wafer-type thermometer capable of adapting itself to automation and improving the heat resistance to measure temperature distribution of a wafer and a method for manufacturing the wafer-type thermometer. A plurality of temperature sensors are arranged in regions formed by segmenting the upper surface of a wafer into a plurality of regions. Output signals from the plurality of temperature sensors are converted into temperature data by a conversion processing circuit where further processes the temperature data. The conversion processing circuit is housed in a storage room surrounded by a heat insulating member made of a nanocrystalline silicon layer.
摘要翻译： 本发明的一个目的是提供一种能够适应自动化和提高耐热性以测量晶片的温度分布的晶片式温度计和晶片式温度计的制造方法。 多个温度传感器被布置在通过将晶片的上表面分割成多个区域而形成的区域中。 来自多个温度传感器的输出信号通过进一步处理温度数据的转换处理电路转换成温度数据。 转换处理电路容纳在由由纳米晶硅层制成的绝热构件包围的储藏室中。
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