公开(公告)号：US06514880B2

公开(公告)日：2003-02-04

申请号：US09827616

申请日：2001-04-06

申请人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

发明人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

IPC分类号： H01L21469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

摘要： A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

摘要翻译： 硅氧烷聚合物绝缘膜的介电常数为3.1以下，具有C原子浓度为20％以下的-SiR 2 O重复结构单元。 硅氧烷聚合物还具有高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发式SialphaOalpha-1R2alpha-β+ 2（OCnH2n + 1）β的含硅烃化合物形成，其中α为1-3的整数，β为2，n为整数1 -3，R是与Si连接的C 1-6烃，然后将蒸发的化合物与氧化剂一起引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。

公开(公告)号：US06559520B2

公开(公告)日：2003-05-06

申请号：US10133419

申请日：2002-04-25

申请人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

发明人： Nobuo Matsuki ,  Lee Jea Sik ,  Yoshinori Morisada ,  Satoshi Takahashi

IPC分类号： H01L2358

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  C08G77/00 ,  H01L2924/00

摘要： A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.