公开(公告)号：US20080261357A1

公开(公告)日：2008-10-23

申请号：US11956858

申请日：2007-12-14

申请人： Norifumi KAMESHIRO ,  Toshiyuki Mine ,  Tomoyuki Ishii ,  Toshiaki Sano

发明人： Norifumi KAMESHIRO ,  Toshiyuki Mine ,  Tomoyuki Ishii ,  Toshiaki Sano

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/66613 ,  H01L29/66772

摘要： After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.

摘要翻译： 在绝缘体层上形成源极 - 漏极材料膜之后，在源极 - 漏极材料膜中形成到达绝缘体层的开口部分。 然后，在开口部分的绝缘体层和源极 - 漏极材料膜上依次形成具有期望厚度的沟道和栅极绝缘体。 此后，在栅极绝缘体上形成嵌入开口部的栅极材料膜。 随后，在栅极材料膜上形成盖膜，从而形成由栅极材料膜制成的栅极。 然后，在源极 - 漏极材料膜上形成掩模层。 接下来，除去未被掩模层保护的源极 - 漏极材料膜，同时通过盖膜保护栅极，从而在栅极的两侧留下源极 - 漏极材料膜。 一侧的源极 - 漏极材料膜成为源极，而另一侧的源极 - 漏极材料膜变成漏极。