公开(公告)号：US08809161B2

公开(公告)日：2014-08-19

申请号：US13935398

申请日：2013-07-03

Applicant: Novellus Systems, Inc.

Inventor： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC: H01L21/4757

CPC classification number: H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

Abstract: Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

Abstract translation: 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。