公开(公告)号：US11721520B2

公开(公告)日：2023-08-08

申请号：US17581079

申请日：2022-01-21

申请人： NuFlare Technology, Inc.

发明人： Kei Obara ,  Kazuyuki Higashi ,  Miyoko Shimada ,  Yoshiaki Shimooka ,  Hitomi Yamaguchi ,  Yoshikuni Goshima ,  Hirofumi Morita ,  Hiroshi Matsumoto

IPC分类号： H01J37/317 ,  H01J37/04

CPC分类号： H01J37/3177 ,  H01J37/045 ,  H01J2237/0437 ,  H01J2237/31776

摘要： A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.