公开(公告)号：US20180190763A1

公开(公告)日：2018-07-05

申请号：US15859050

申请日：2017-12-29

申请人： Nuvoton Technology Corporation

发明人： Shao-Ming YANG ,  Ting-Yao CHIEN ,  Chieh-Chih WU ,  Tzu-Chieh LEE ,  Chiu-Chung LAI

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L29/0623 ,  H01L21/76224 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： High-voltage semiconductor devices are provided. The high-voltage semiconductor device includes a substrate having a first conductive type and a gate region disposed on the substrate. The high-voltage semiconductor also includes a source region and a drain region disposed on two sides of the gate region respectively. The high-voltage semiconductor also includes a linear doped region disposed between the gate region and the drain region, wherein the linear doped region has a nonuniform doping depth and the first conductive type. The high-voltage semiconductor further includes a first buried layer disposed under the source region and having the first conductive type.