公开(公告)号：US20090152673A1

公开(公告)日：2009-06-18

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

Inventor： O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

IPC: H01L23/482 ,  H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。