公开(公告)号：US20090152673A1

公开(公告)日：2009-06-18

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

Inventor： O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

IPC: H01L23/482 ,  H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20100111469A1

公开(公告)日：2010-05-06

申请号：US12684677

申请日：2010-01-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/122

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20090154871A1

公开(公告)日：2009-06-18

申请号：US12117708

申请日：2008-05-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US20100150500A1

公开(公告)日：2010-06-17

申请号：US12491454

申请日：2009-06-25

Applicant: Junghyung PYO ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Junghyung PYO ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/26

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/34

Abstract: Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.

Abstract translation: 提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅 所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及 具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

公开(公告)号：US20080151956A1

公开(公告)日：2008-06-26

申请号：US11952408

申请日：2007-12-07

Applicant: Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

Inventor： Gyungock KIM ,  In Gyoo KIM ,  Junghyung PYO ,  Ki Seok CHANG

IPC: H01S5/323

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

Abstract translation: 公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。 因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

公开(公告)号：US20080037936A1

公开(公告)日：2008-02-14

申请号：US11828418

申请日：2007-07-26

Applicant: Jong Moo LEE ,  Duk Jun KIM ,  Junghyung PYO ,  Gyungock KIM

Inventor： Jong Moo LEE ,  Duk Jun KIM ,  Junghyung PYO ,  Gyungock KIM

IPC: G02B6/10 ,  G02B6/34

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.

Abstract translation: 提供了一种硅阵列波导光栅（AWG）器件，其包括硅阵列波导，其中布置由下包层，硅芯和上包层形成的多个光波导，其中折射率的变化 硅芯是正的，并且上包层由聚合物形成，其折射率随着温度的变化是负的，其与硅芯相反，并且硅芯的横截面在不同的区域之间变化 以根据温度调节光波导的有效折射率的变化。