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1.发明申请公开(公告)号：US20200239771A1
公开(公告)日：2020-07-30
申请号：US16749193
申请日：2020-01-22
Applicant: OCI COMPANY LTD.
Inventor： Ho-Seong YOO , Myung-Hyun KIM , Jun-Eun LEE , Pyong-Hwa JANG
IPC: C09K13/06 , H01L21/465
Abstract: Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film.
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