公开(公告)号：US11104848B2

公开(公告)日：2021-08-31

申请号：US16749193

申请日：2020-01-22

Applicant: OCI COMPANY LTD.

Inventor： Ho-Seong Yoo ,  Myung-Hyun Kim ,  Jun-Eun Lee ,  Pyong-Hwa Jang

IPC: C08K13/06 ,  H01L21/465 ,  C09K13/06

Abstract: Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film.