-
公开(公告)号：US20220320163A1
公开(公告)日：2022-10-06
申请号：US17217937
申请日：2021-03-30
发明人： Seong Yeol Mun , Yibo Zhu , Keiji Mabuchi
IPC分类号： H01L27/146
摘要： A high k passivation layer, an anti-reflective coating layer, and a buffer layer are disposed over semiconductor substrate including photodiodes formed therein. Trenches are etched into the semiconductor substrate through the buffer layer, anti-reflective coating layer, and the high k passivation layer in a grid-like pattern surrounding each of the photodiodes in the semiconductor substrate. Another high k passivation layer lines an interior of the trenches in the semiconductor substrate. An adhesive and barrier layer is deposited over the high k passivation layer that lines the interior of the trenches. A deep trench isolation (DTI) structure is formed with conductive material deposited into the trenches over the adhesive and barrier layer to fill the trenches. A grid structure is formed over the DTI structure and above a plane of the buffer layer. The grid structure is formed with the conductive material.
-
公开(公告)号：US11557620B2
公开(公告)日：2023-01-17
申请号：US17217937
申请日：2021-03-30
发明人： Seong Yeol Mun , Yibo Zhu , Keiji Mabuchi
IPC分类号： H01L27/146
摘要： A high k passivation layer, an anti-reflective coating layer, and a buffer layer are disposed over semiconductor substrate including photodiodes formed therein. Trenches are etched into the semiconductor substrate through the buffer layer, anti-reflective coating layer, and the high k passivation layer in a grid-like pattern surrounding each of the photodiodes in the semiconductor substrate. Another high k passivation layer lines an interior of the trenches in the semiconductor substrate. An adhesive and barrier layer is deposited over the high k passivation layer that lines the interior of the trenches. A deep trench isolation (DTI) structure is formed with conductive material deposited into the trenches over the adhesive and barrier layer to fill the trenches. A grid structure is formed over the DTI structure and above a plane of the buffer layer. The grid structure is formed with the conductive material.
-
搜索结果
2 条记录 (耗时 0.012 秒)
