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公开(公告)号：US20240114258A1
公开(公告)日：2024-04-04
申请号：US17957451
申请日：2022-09-30
发明人： Keiji Mabuchi
摘要： A method of operating an imaging system is described. The method comprising transferring first image charges accumulated during a long exposure period of a first image frame to respective floating diffusion regions of a first pixel and a second pixel, reading out long exposure image signals from the respective floating diffusion regions to a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel, transferring second image charges accumulated during a short exposure period of the first image frame to the respective floating diffusion regions of the first pixel and the second pixel, reading out a short exposure image signal from a corresponding one of the floating diffusion regions to the second storage capacitor, and reading out storage charge signals from the first storage capacitor and the second storage capacitor to generate image data for the first image frame.
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公开(公告)号：US11557620B2
公开(公告)日：2023-01-17
申请号：US17217937
申请日：2021-03-30
发明人： Seong Yeol Mun , Yibo Zhu , Keiji Mabuchi
IPC分类号： H01L27/146
摘要： A high k passivation layer, an anti-reflective coating layer, and a buffer layer are disposed over semiconductor substrate including photodiodes formed therein. Trenches are etched into the semiconductor substrate through the buffer layer, anti-reflective coating layer, and the high k passivation layer in a grid-like pattern surrounding each of the photodiodes in the semiconductor substrate. Another high k passivation layer lines an interior of the trenches in the semiconductor substrate. An adhesive and barrier layer is deposited over the high k passivation layer that lines the interior of the trenches. A deep trench isolation (DTI) structure is formed with conductive material deposited into the trenches over the adhesive and barrier layer to fill the trenches. A grid structure is formed over the DTI structure and above a plane of the buffer layer. The grid structure is formed with the conductive material.
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公开(公告)号：US20220352220A1
公开(公告)日：2022-11-03
申请号：US17243024
申请日：2021-04-28
发明人： Hui Zang , Yuanliang Liu , Keiji Mabuchi , Gang Chen , Bill Phan , Duli Mao , Takeshi Takeda
IPC分类号： H01L27/146
摘要： An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.
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公开(公告)号：US11272126B2
公开(公告)日：2022-03-08
申请号：US17204786
申请日：2021-03-17
发明人： Sohei Manabe , Keiji Mabuchi
IPC分类号： H04N5/353 , H04N5/355 , H04N5/3745 , H04N5/378
摘要： An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.
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公开(公告)号：US20210377435A1
公开(公告)日：2021-12-02
申请号：US16886473
申请日：2020-05-28
发明人： Tiejun Dai , Keiji Mabuchi , Zhe Gao
IPC分类号： H04N5/235 , H01L27/092 , H04N5/345 , H01L27/146
摘要： A pixel cell includes a first subpixel and a plurality of second subpixels. Each subpixel includes a photodiode to photogenerate image charge in response to incident light. Image charge is transferred from the first subpixel to a floating diffusion through a first transfer transistor. Image charge is transferred from the plurality of second subpixels to the floating diffusion through a plurality of second transfer transistors. An attenuation layer is disposed over the first subpixel. The first subpixel receives the incident light through the attenuation layer. The plurality of second subpixels receive the incident light without passing through the attenuation layer. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A capacitor is coupled to the DFD transistor.
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公开(公告)号：US10741593B1
公开(公告)日：2020-08-11
申请号：US16422646
申请日：2019-05-24
发明人： Keiji Mabuchi , Sohei Manabe
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.
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公开(公告)号：US10283558B1
公开(公告)日：2019-05-07
申请号：US15972380
申请日：2018-05-07
发明人： Sohei Manabe , Keiji Mabuchi
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： An image sensor including a photodiode, a floating diffusion region, a first, second, and third doped region of a semiconductor material, and a first capacitor is presented. The photodiode is disposed in the semiconductor material to generate image charge in response to incident light. The floating diffusion region is disposed in the semiconductor material proximate to the photodiode. The floating diffusion region is at least partially surrounded by the first doped region of the semiconductor material. The second doped region and the third doped region of the semiconductor material each have an opposite polarity of the floating diffusion region and the first doped region. The floating diffusion region and at least part of the first doped region are laterally disposed between the second doped region and the third doped region.
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公开(公告)号：US20180124372A1
公开(公告)日：2018-05-03
申请号：US15341374
申请日：2016-11-02
发明人： Zheng Yang , Eiichi Funatsu , Sohei Manabe , Keiji Mabuchi , Dajiang Yang , Duli Mao , Bowei Zhang
CPC分类号： H04N13/106 , G01B11/24 , G06T5/001 , G06T5/50 , G06T7/586 , G06T7/593 , G06T2207/10028 , G06T2207/10144 , G06T2207/10152 , G06T2207/20224 , H01L27/146 , H01L27/14614 , H01L27/14643 , H04N5/3535 , H04N5/37452 , H04N5/378 , H04N13/254 , H04N13/271 , H04N2013/0092
摘要： An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.
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公开(公告)号：US09936153B1
公开(公告)日：2018-04-03
申请号：US15285352
申请日：2016-10-04
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC分类号： H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
摘要： Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.
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公开(公告)号：US20210358993A1
公开(公告)日：2021-11-18
申请号：US16877077
申请日：2020-05-18
发明人： Duli Mao , Bill Phan , Keiji Mabuchi , Seong Yeol Mun , Yuanliang Liu , Vincent Venezia
IPC分类号： H01L27/146 , H04N5/378 , H04N5/355
摘要： A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.
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