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公开(公告)号:US12285600B2
公开(公告)日:2025-04-29
申请号:US17757966
申请日:2020-12-18
Applicant: OSAKA UNIVERSITY
Inventor: Seiji Kameda , Masayuki Hirata
Abstract: A resistance device (100) includes a field-effect transistor (TN) and a voltage applying circuit (1). The voltage applying circuit (1) applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect transistor (TN). The control voltage (Vgs) is a voltage obtained by adding a correction voltage (Vc) to a reference voltage (Vgs0). The correction voltage (Vc) depends on the temperature (T) and is set to be zero at a first temperature (T1).
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公开(公告)号:US11779278B2
公开(公告)日:2023-10-10
申请号:US16484922
申请日:2018-02-09
Applicant: NIHON KOHDEN CORPORATION , OSAKA UNIVERSITY , NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY , SPChange, LLC.
Inventor: Kaoru Imajo , Katsuyoshi Suzuki , Masayuki Hirata , Seiji Kameda , Takafumi Suzuki , Hiroshi Ando , Takatsugu Kamata
CPC classification number: A61B5/6868 , A61B5/0006 , A61B5/0031 , A61B5/291
Abstract: An internal device (1) is implanted in a living body (300). A control section (6) causes a communication section (5) to wirelessly transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through a group of N (N is 2 or more) electrodes, to an external device (200). When the communication section (5) receives a designation signal designating a group of M electrode(s) (2a), M being smaller than N, the communication section (5) is caused to transmit data corresponding to electroencephalogram signals of the living body (300) which are detected through the group of M electrode(s) (2a), to the external device (200) in real time.
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