公开(公告)号：US20210320006A1

公开(公告)日：2021-10-14

申请号：US17267307

申请日：2019-08-09

Applicant: OSRAM OLED GmbH

Inventor： Martin Behringer ,  Alexander Behres ,  Asako Hirai

IPC: H01L21/02 ,  H01L21/683 ,  H01L23/00

Abstract: A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is Inx1Aly1Ga(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.

公开(公告)号：US10910516B2

公开(公告)日：2021-02-02

申请号：US16660449

申请日：2019-10-22

Applicant: OSRAM OLED GMBH

Inventor： Alvaro Gomez-Iglesias ,  Asako Hirai

IPC: H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343 ,  H01L33/14 ,  H01L33/00

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10). Furthermore, each injection region (2) is laterally surrounded by a continuous path of the active layer (11), the active layer (11) being doped less in the path than in the injection region (2) or oppositely thereto. During the operation of the semiconductor element (100), charge carriers reach the injection regions (2) at least partly from the first layer (10) and are directly injected into the active layer (11) from there.