公开(公告)号：US20230299562A1

公开(公告)日：2023-09-21

申请号：US18322661

申请日：2023-05-24

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bemhard Stojetz

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.