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公开(公告)号：US12062887B2
公开(公告)日：2024-08-13
申请号：US18322661
申请日：2023-05-24
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US11804696B2
公开(公告)日：2023-10-31
申请号：US16973458
申请日：2019-06-12
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Muhammad Ali
CPC classification number: H01S5/22 , H01S5/0202 , H01S5/026 , H01S5/0282 , H01S5/0424
Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.
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公开(公告)号：US11527865B2
公开(公告)日：2022-12-13
申请号：US16641851
申请日：2018-08-10
Applicant: OSRAM OLED GmbH
Inventor： Matthias Peter , Teresa Wurm , Christoph Eichler
IPC: H01S5/042 , H01L31/0304 , H01S5/30 , H01S5/343 , H01L33/32
Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.
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公开(公告)号：US20220239069A1
公开(公告)日：2022-07-28
申请号：US17720794
申请日：2022-04-14
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US20200303898A1
公开(公告)日：2020-09-24
申请号：US16890776
申请日：2020-06-02
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Loeffler
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.
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Patent Agency Ranking
公开(公告)号：US11923660B2
公开(公告)日：2024-03-05
申请号：US16973452
申请日：2019-06-06
Applicant: OSRAM OLED GmbH
Inventor： Bernhard Stojetz , Christoph Eichler , Alfred Lell , Sven Gerhard
CPC classification number: H01S5/18308 , H01S5/041 , H01S5/18361 , H01S5/4093 , H01S2301/176
Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.
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公开(公告)号：US20230299562A1
公开(公告)日：2023-09-21
申请号：US18322661
申请日：2023-05-24
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bemhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US10833475B2
公开(公告)日：2020-11-10
申请号：US16081881
申请日：2017-03-03
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Sven Gerhard
IPC: H01S5/022 , H01L33/48 , H01L33/20 , H01L33/44 , H01L33/62 , H01L33/64 , H01S5/024 , H01S5/028 , H01S5/10 , H01S5/22 , H01S5/40
Abstract: An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.
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公开(公告)号：US10811843B2
公开(公告)日：2020-10-20
申请号：US15761419
申请日：2016-09-27
Applicant: OSRAM OLED GMBH
Inventor： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Loeffler , Christoph Eichler
Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.
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公开(公告)号：US10673201B2
公开(公告)日：2020-06-02
申请号：US16311868
申请日：2017-06-07
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Sven Gerhard , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.
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