公开(公告)号：US20160104819A1

公开(公告)日：2016-04-14

申请号：US14891658

申请日：2014-05-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian SCHMID ,  Julia GROSSER ,  Richard FLOETER ,  Markus BROELL

IPC: H01L33/44 ,  H01L33/24

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/24 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

Abstract translation: 一种制造光电子半导体芯片的方法包括以下步骤：提供衬底，沉积牺牲层，沉积功能半导体层序列，横向构图功能半导体层序列，以及在湿热氧化工艺中氧化牺牲层。