公开(公告)号：US20160276534A1

公开(公告)日：2016-09-22

申请号：US14442394

申请日：2013-11-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Petrus SUNDGREN ,  Markus BROELL

IPC: H01L33/14 ,  H01L33/40 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/0232 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/14 ,  H01L31/02327 ,  H01L31/03042 ,  H01L31/1852 ,  H01L31/186 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/305 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016

Abstract: An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

Abstract translation: 提供一种光电子半导体芯片（1），其具有半导体本体，该半导体主体包括具有用于产生和/或接收辐射的有源区（20）的半导体层序列（2），第一导电类型的第一半导体区 ，第二导电类型的第二半导体区域（22）和覆盖层（25）。 有源区域（20）被布置在第一半导体区域（21）和第二半导体区域（22）之间，并且包括在远离有源区域的一侧的接触层（210）。 覆盖层（25）布置在远离有源区域（20）的第一半导体区域（21）的侧面上并且包括至少一个切口（27），其中接触层（210）邻接第一 连接层（3）。 覆盖层是第二导电类型。 此外，提供了一种用于制造光电半导体芯片的方法。

公开(公告)号：US20180301595A1

公开(公告)日：2018-10-18

申请号：US15948650

申请日：2018-04-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Xue WANG ,  Markus BROELL ,  Stefan BARTHEL

IPC: H01L33/06 ,  H01L33/30 ,  H01L31/0352 ,  H01L31/0304

CPC classification number: H01L33/06 ,  H01L31/03046 ,  H01L31/035263 ,  H01L33/30

Abstract: A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).

公开(公告)号：US20160104819A1

公开(公告)日：2016-04-14

申请号：US14891658

申请日：2014-05-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian SCHMID ,  Julia GROSSER ,  Richard FLOETER ,  Markus BROELL

IPC: H01L33/44 ,  H01L33/24

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/24 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

Abstract translation: 一种制造光电子半导体芯片的方法包括以下步骤：提供衬底，沉积牺牲层，沉积功能半导体层序列，横向构图功能半导体层序列，以及在湿热氧化工艺中氧化牺牲层。