公开(公告)号：US20190259919A1

公开(公告)日：2019-08-22

申请号：US15932366

申请日：2018-02-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

IPC: H01L33/50

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

公开(公告)号：US11552228B2

公开(公告)日：2023-01-10

申请号：US16104743

申请日：2018-08-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Maxim N. Tchoul ,  Darshan Kundaliya ,  Adam Scotch ,  Gertrud Kräuter

IPC: H01L33/50 ,  H01L33/56

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

公开(公告)号：US10570333B2

公开(公告)日：2020-02-25

申请号：US15602175

申请日：2017-05-23

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Gertrud Kraeuter ,  Matthias Loster

IPC: C09K11/77 ,  C09K11/02 ,  H01L33/50 ,  F21K9/64 ,  C08K3/22 ,  C08K3/36 ,  F21V7/22 ,  F21Y115/30 ,  F21Y115/10

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

公开(公告)号：US20200056091A1

公开(公告)日：2020-02-20

申请号：US16104743

申请日：2018-08-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Maxim N. Tchoul ,  Darshan Kundaliya ,  Adam Scotch ,  Gertrud Kräuter

IPC: C09K11/02 ,  H01L33/50 ,  H01L33/56 ,  C09K11/77 ,  C08G77/04 ,  C09D5/22 ,  C09D183/04

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

公开(公告)号：US11515454B2

公开(公告)日：2022-11-29

申请号：US16909685

申请日：2020-06-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

IPC: H01L33/56 ,  H01L33/50

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

公开(公告)号：US10727379B2

公开(公告)日：2020-07-28

申请号：US15932366

申请日：2018-02-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

IPC: H01L33/56 ,  H01L33/50

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

公开(公告)号：US10662310B2

公开(公告)日：2020-05-26

申请号：US15960739

申请日：2018-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Maxim N. Tchoul ,  Thomas Dreeben ,  Adam Scotch ,  Alan Piquette ,  Gertrud Kräuter ,  Darshan Kundaliya

IPC: C08K3/22 ,  H01L33/50 ,  H01L33/56 ,  C09K11/02 ,  C09K11/77

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

公开(公告)号：US20190322837A1

公开(公告)日：2019-10-24

申请号：US15960739

申请日：2018-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Maxim N. Tchoul ,  Thomas Dreeben ,  Adam Scotch ,  Alan Piquette ,  Gertrud Kräuter ,  Darshan Kundaliya

IPC: C08K3/22 ,  H01L33/50 ,  H01L33/56 ,  C09K11/02 ,  C09K11/77

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

公开(公告)号：US20180340119A1

公开(公告)日：2018-11-29

申请号：US15602175

申请日：2017-05-23

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Gertrud Kraeuter ,  Matthias Loster

IPC: C09K11/77 ,  C09K11/02 ,  C08K3/22 ,  C08K3/36 ,  H01L33/50 ,  F21V7/22 ,  F21K9/64

CPC classification number: C09K11/7774 ,  C08K3/22 ,  C08K3/36 ,  C08K2003/2227 ,  C09K11/02 ,  C09K11/025 ,  F21K9/64 ,  F21V7/22 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L33/501 ,  H01L33/502

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.