公开(公告)号：US20140248758A1

公开(公告)日：2014-09-04

申请号：US14351975

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。

公开(公告)号：US09449879B2

公开(公告)日：2016-09-20

申请号：US14987910

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  H01L21/304 ,  B23K26/38 ,  B23K26/40 ,  H01L21/683 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

公开(公告)号：US20160133520A1

公开(公告)日：2016-05-12

申请号：US14987910

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。

公开(公告)号：US09263334B2

公开(公告)日：2016-02-16

申请号：US14351975

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01L33/00 ,  H01L33/38 ,  B23K26/36

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。