公开(公告)号：US10355170B2

公开(公告)日：2019-07-16

申请号：US15507752

申请日：2015-08-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/36 ,  H01L33/38 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L33/24

Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

公开(公告)号：US20180130925A1

公开(公告)日：2018-05-10

申请号：US15553415

申请日：2016-02-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/38 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/42

Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.

公开(公告)号：US20140248758A1

公开(公告)日：2014-09-04

申请号：US14351975

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。

公开(公告)号：US11114525B2

公开(公告)日：2021-09-07

申请号：US16488548

申请日：2018-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L21/44 ,  H01L23/52 ,  H01L49/02 ,  H01L21/768 ,  H01L33/00

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

公开(公告)号：US20200044118A1

公开(公告)日：2020-02-06

申请号：US16488548

申请日：2018-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/46 ,  H01L33/62 ,  H01L23/00 ,  H01L33/64

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

公开(公告)号：US20160133520A1

公开(公告)日：2016-05-12

申请号：US14987910

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。

公开(公告)号：US09263334B2

公开(公告)日：2016-02-16

申请号：US14351975

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01L33/00 ,  H01L33/38 ,  B23K26/36

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.

Abstract translation: 切断半导体器件复合物的方法包括具有主表面和设置在主表面上的半导体层序列的载体，包括通过第一激光切割形成半导体器件复合材料中的分离沟槽，使得分离沟槽仅部分地切断半导体 器件复合在垂直于主表面的垂直方向上复合，并且用激光切割切割半导体器件复合物，沿着分离沟槽完全切割。

公开(公告)号：US20220130894A1

公开(公告)日：2022-04-28

申请号：US17439826

申请日：2020-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

Abstract: An optoelectronic semiconductor device may include a plurality of picture elements, each of which include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor device further includes separating elements arranged between adjacent picture elements and extend in a horizontal direction along a boundary of the adjacent picture element, adjoin the first and the second semiconductor layers, respectively, and extend in the vertical direction through the first and the second semiconductor layers, respectively.

公开(公告)号：US20200028045A1

公开(公告)日：2020-01-23

申请号：US16495219

申请日：2018-03-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Christoph Schwarzmaier ,  Dominik Scholz ,  Nicole Heitzer

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/60 ,  C25D7/12

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

公开(公告)号：US10153400B2

公开(公告)日：2018-12-11

申请号：US15553415

申请日：2016-02-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/42

Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.